Prof.Dr. RAŞİT TURAN
FACULTY OF ARTS AND SCIENCES
PublicationsResearchMembership & Awards
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Education

  Bachelor's, Middle East Technical University, Physics
  Master's, Middle East Technical University, Physics
  Doctorate, University of Oslo, Physics

Publications (INTERNATIONAL)

Journal Papers

  A.1 O.Nur, M. Karlsteen, M. Willander, R. Turan, B. Aslan, 7, Correlation between barrier height and band offsets in metal/Si1-xGex/Si heterostructures. "Applied Physics Letters", 73, (1998), p.3920-3922.
  A.2 Ö. S. Anilturk, R. Turan, Temperature dependence of a crSi2 Schottky barrier on n,type and p,type Si. "Semiconductor Science and Technology", 14, (1999), p.1060-1064.
  A.3 O.S. Anıltürk, and R. Turan, Electrical transport at a non-ideal CrSi2/Si junction. "Solid State Electronics", 44, (2000), p.41-48.
  A.4 H Ouacha, O. Nur, Y.Fu, M. Willander, A. Ouacha, R. Turan, Comparision between the noise properties of PtSi/p-Si1-xGex Schottky contact prepared by co-sputtering and thermal reaction. "Semiconductor Science and Technology", 16, (2001), p.255-259.
  A.5 R. Turan, B. Aslan, O. Nur, M. Y. A. Yousif, M. Willander, Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction. "Applied Physics A", 72, (2001), p.587-593.
  A.6 B. Aslan, R. Turan, On the internal photoemission spectrum of PtSi/p-Si infrared detectors. "Infrared Physics and Technology", 48, (2002), p.4.
  A.7 T.G. Finstad, R. Turan, A. Gunnæs, U. Serincan, E.Marstein, A. Olsen, Vanishing Nano Ge Crystal Balls. "NEOP-Workshop", (2002).
  A.8 R. Turan, T.G. Finstad, U. Serincan, A.E. Gunnæs, E.S. Marstein,A. Olsen, G.Kart, Evolution of Ge nanostructures formed by ion implantation in SiO2. "COST-Workshop", (2002).
  A.9 E. S. Marstein, A. E. Gunnæs, U. Serincan, R. Turan, A. Olsen and T. G. Finstad, Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films.. "Surface and Coatings Technology", 544, (2002), p.158-159.
  A.10 Marstein ES, Gunnaes AE, Serincan U, Jorgensen S, Olsen A, Turan R, Finstad TG, Mechanisms of void formation in Ge implanted SiO2 films . "NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATO", (2003), p.424-433.
  A.11 Karabulut O, Parlak M, Yilmaz K, Turan R, Akinoglu BG, Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal . "CRYSTAL RESEARCH AND TECHNOLOGY", 38, (2003), p.1071-1076.
  A.12 Jacob AP, Myrberg T, Friesel M, Nur O, Willander M, Serincan U, Turan R, Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor . "MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING", 6, (2003), p.37-41.
  A.13 Kartopu G, Bayliss SC, Karavanskii VA, Curry RJ, Turan R, Sapelkin AV, On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium . "JOURNAL OF LUMINESCENCE", 101, (2003), p.275-283.
  A.14 Karabulut O, Parlak M, Turan R, Serincan U, Tasarkuyu E, Akinoglu BG, Electrical properties of nitrogen implanted GaSe single crystal . "CRYSTAL RESEARCH AND TECHNOLOGY", 38, (2003), p.811-816.
  A.15 U. Serincan, G. Kartopu, A. Guennes, T. G. Finstad, R. Turan, Y. Ekinci and S.C., Characterization of Ge nanocrystals embedded in SiO2 by Raman Spectroscopy, . "Semiconductor Science and Technology", 19, (2004), p.247-251.
  A.16 E. S. Marstein, A. E. Gunnaes, Olsen A., T. G. Finstad, R. Turan, and U. Serinc, Introduction of Si/SiO2 interface states by annealing Ge implanted films. "Journal of Applied Physics", 96, (2004), p.4308.
  A.17 I. Avci, M.Tepe, U. Serincan, B. Oktem, R. Turan, D. Abukay, Electrical and magnetic properties of Si on implanted YBa2Cu307-delta thin films and microbridges. "Thin Solid Films", 466, (2004), p.37-40.
  A.18 B. Aslan, R. Turan, H.C. Liu, J. M. Baribeau, M. Buchanan, and P. Chow-Chong, Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors. "Applied Physics B-Lasers and Optics", (2004), p.225-228.
  A.19 G. Aygun , E. Atanassova, A. Alacakir, L Ozyuzer and R Turan, Oxidation of Si surface by a pulsed Nd: YAG laser.. "Journal of Physics D-Applied Physics", 37, (2004), p.1569-1575.
  A.20 B. Aslan, R. Turan, H.C. Liu, J. M. Baribeau, Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors. "Semicond. Science and Technology", 19, (2004), p.399-403.
  A.21 C. Allahverdi, MH. Yukselici, R.Turan, A. Seyhan, Photoluminescence spectroscopy in the study of growth of CdSxSe1-x nanocrystals in glass.. "Semiconductor Science and Technology", 19, (2004), p.1005-1009.
  A.22 B. Belin, P. Bode , R. Turan, Th. G. Van Meerten, Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS.. "Journal of Radioanalytical and Nuclear Chemistry", 261, (2004), p.479-483.
  A.23 U.Serincan, S.Yerci, M.Kulakci, R.Turan, Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation. "Nuclear Instruments and Methods in Physics Research B", 239, (2005), p.419.
  A.24 Avci I, Tepe M, Oktem B, Serincan U, Turan R, Abukay D., Developing a trilayer processing technique for superconducting YBa2Cu3O7-delta thin films by using Ge ion implantation. "Superconductive Science and Technology", 18, (2005), p.477.
  A.25 B.Aslan, R.Turan,, On the theory of internal photoemission in heterojunctions. "Infrared Physics & Technology", 46, (2005), p.473.
  A.26 A.Seyhan, O.Karabulut, B.G.Akınoglu, B.Aslan, R.Turan, Optical anisotropy in GaSe. "Crystal Research and Technology", 40, (2005), p.893.
  A.27 U.V. Desnica, P. Dubcek, K. Salamon, M.Buljan, U.Serincan, R.Turan, The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2. "Nuclear Instruments and Methods in Physics Research B", 238, (2005), p.272.
  A.28 B.Aslan, R.Turan, HC.Liu, Study on the long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors. "Infrared Physics & Technology", 47, (2005), p.195.
  A.29 G.Aygun, E.Atanassova, R.Turan, Tz.Babeva, Reflectance spectra and refractive index of a Nd:YAG lazer-oxidized Si surface. "Materials Chemistry and Physics", 89, (2005), p.316-320.
  A.30 S.Ulucan, G.Aygun, L.Ozyuzer, M.Egilmez, R.Turan, Properties of reactive O-2 ion beam sputtered TiO2 on Si wafers. "Journal of Optoelectronics and Advanced Materials", 7, (2005), p.297.
  A.31 G.Kartopu, U.Serincan, R.Turan, R.E.Hummel, Y.Ekinci, A.E.Gunnaes, T.G.Finstad, Can chemically-etched Ge or Ge nanocrystals emit visible PL?. "Physica Status Solidi", 202, (2005), p.1472.
  A.32 U. Serincan, G. Aygun, R. Turan, The Evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2. "Journal of Luminescence", 113, (2005), p.229.
  A.33 S.Yerci, U.Serincan, I.Doğan, M.S.Tokay, M. Genisel, A.Aydinli, R.Turan, Formation of Silicon Nanocrystals in Sapphire by Ion Implantation and the Origin Visible Photoluminescence. "Journal of Applied Physics", 100, (2006), p.74301.
  A.34 Karabulut O, Parlak M, Turan R, Serincan U, Akinoğlu B.G, Influence of Ion Implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals. "Crystals Research and Technology", 41, (2006), p.243.
  A.35 M.Rosinski, J.Badziak, A. Czarnecka, P. Gasior, P. Parsy, R.Turan, S.Yerci, Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge Ions produced by repetitive laser pulses. "Materials Science in Semiconductor Processing", 9, (2006), p.655.
  A.36 Mayandi, Finstad, Foss, Thogersen, serincan, Turan., Luminescence from silicon nanoparticles in SiO2: atomic force microscopy and transmission electron microscopy studies. "Physica Scripta", 126, (2006), p.77-80.
  A.37 M.Kulakçı, U.Serincan, R.Turan, Elektroluminescence generated by metal oxide semiconductor light emitting diode with Si nanocrystals embedded in SiO2 layers by ion ımplantation. "Semiconductor Science and Technology", 21, (2006), p.1527.
  A.38 Aygun G, Atanassova E, Kostov K, Turan R, XPS study of Pulsed Nd: YAG laser oxidized Si. "Journal of Non-Crystalline Solids", 352 (28-29, (2006), p.3134-3139.
  A.39 Desnica UV, Buljan M, Dubcek P, Siketic Z, Radovic IB, Serincan U,Turan R, Ion beam synthesis and characterization of Ge nanoparticles in SiO2. "Nuclear Instruments & Methods in Physics Research Section b-beam ınteractions with Materials", 249, (2006), p.843-846.
  A.40 Atanassova E, Aygun G, Turan R, Babeva T, Structural and Optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidataion. "Journal of Vacuum Science & Technology", A 24 (2), (2006), p.206.
  A.41 Goksen K, Gasanly MN, Seyhan A, Turan R,, Temperature and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals. "Materials Science and Engineering B-Solid State Materials for Advenced Technology", 127, (2006), p.41.
  A.42 Goksen K, Gasanly NM, Turan R, B.G.Akınoğlu, Excitation intensity and temperature-dependent photoluminescence and optical absorption in TI4Ga3InSe8 layered crystals. "Crystals Research and Technology", 41, (2006), p.822.
  A.43 H.Karaağaç, M.Parlak, O.Karabulut, U.Serincan, R.Turan, B.G.Akınoğlu, Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique. "Cryst.Res.Technol.", 41, (2006), p.1159.
  A.44 S. Yerci, I. Yıldız, M. Kulakcı, U Serincan, M. Barozzi, M. Bersani, R. Turan, Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation. "Journal of Applied Physics", 102, (2007), p.024309.
  A.45 A Dana, I Akca, A Aydinli, Terje Finstad, Rasit Turan, Charge retention in quantized energy levels of nanocrystals. "Physica E", 38, (2007), p.94-98.
  A.46 Guler I, Goksen K, Gasanly NM, Turan R, Low temperature visible photoluminescence and optical absorption in Tl2In2Se3S semiconductor.. "Physica B", 395, (2007), p.116-120.
  A.47 H. Goktas, A. Demir, E. Kacar, H Hegazy, R. Turan, G. Oke, A. Seyhan, Spectroscopic measurements of electron temperature and electron density in electron beam plasma generator based on collisional radiative model, H. Goktas, Spectroscopy Letters, 40, 183 (2. "Spectroscopy Letters", 40, (2007), p.183-192.
  A.48 U. Serincan, M. Kulakci, R. Turan, S. Foss, T. G. Finstad, Variation of Photoluminescence from Si Nanostructures in SiO2 Matrix with Si+ Post Implantation, U. Serincan, M. Kulakci, R. Turan, S. Foss and T. G. Finstad. "Nuclear Instruments and Methods in Physics Research", B 254, (2007), p.87-92.
  A.49 E. Yılmaz, B. Kaleli, R. Turan, A systematic study on MOS type radiation sensors.. "Nuclear Instruments and Methods in Physics Research", B 264, (2007), p.287-292.
  A.50 J. Mayandi,T.G Finstad, A.Thøgersen, S, Foss, U. Serincan, R. Turan, Scanning Probe Measurements on Luminescent Silicon Nanoclusters in SiO2 Films.. "Thin Solid Films", 515, (2007), p.6375-6380.
  A.51 Wolowski, Badziak, Czarnecka, Parys, Pisarek, Rosinski, R. Turan, S.Yerci, Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites. "Laser and Particle Beams", 25, (2007), p.65-69.
  A.52 J. Mayandi, T.G. Finstad, S. Foss A. Thøgersen, U. Serincan and, R. Turan, Luminescence from ion beam synthesized Si nanocrystals embedded in SiO2 films and the effect of damage on nucleation , Surface and Coating Technology. . "Surface and Coating Technology", 201, (2007), p.8482-8485.
  A.53 G. Kartopu, A. V. Sapelkin, V. A. Karavanskii, U. Serincan, R. Turan, Structural and optical properties of porous nanocrystalline Ge. "Journal of Applied Physics", 103, (2008), p.113518.
  A.54 Muradov, M. B., Eyvazova, G. M. Turan, R., Maharramov, A. M., Effective mass and peculiarity of optical properties of Cadmium Sulfide nanoparticles. "OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS", 2, (2008), p.775.
  A.55 Mogaddam, N. A. P, Alagoz, A. S, Yerci, S., Turan, R. Foss, S., Finstad, T., Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing. "JOURNAL OF APPLIED PHYSICS", (2008), p.124309.
  A.56 Ozenbas M, Turan R, Karakas G, A special issue - Selected peer reviewed articles from NANOMAT 2006 - International Workshop on Nanostructured Materia. "Journal of Nanoscience and Technology", 8, (2008), p.467.
  A.57 S. Yerci, M. Kulakci, U. Serincan, R. Turan, M. Shandalov and Y. Golan, Formation of Ge Nanocrystals in Al2O3 matrix, S. Yerci, M. Kulakci, U. Serincan, R. Turan, M. Shandalov and Y. Golan. "Journal of Nanoscience and Nanotechnology", 8, (2008), p.759.
  A.58 Kulakci M, Serincan U, Turan R, Finstad TG, The quantum confined Stark effect in silicon nanocrystals. "Nanotechnology", 19, (2008), p.455403.
  A.59 Karabulut M , Bilir G , Mamedov GM, Seyhan A, Turan R, Photoluminescence spectra of nitrogen implanted GaSe crystals. "Journal of Luminescence", 128, (2008), p.1551.
  A.60 E. Yilmaz, R. Turan, Temperature cycling of MOS-based radiation sensors. "Sensors And Actuators A-Physical", 141, (2008), p.1.
  A.61 M. Righini, A. Gnoli, L. Razzari, U. Serincan, R. Turan, Evaluation of the radiative recombination mechanism in Si nanocrystals embedded in silica matrix. "Journal of Nanoscience and Nanotechnology", 8, (2008), p.823.
  A.62 P. Basa, A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, Zs. J. Horváth, Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals,Appl. Surf. Sci., 254, 3626 (2008).. "Applied Surface Science", 254, (2008), p.254.
  A.63 A. Dana, I. Akça, R. Turan, T.G. Finstad and A. Aydinli, A figure of merit for optimization of nanocrystal flash memory design. "Journal of Nanoscience and Nanotechnology", 8, (2008), p.503.
  A.64 Wang JW, Righini M, Gnoli A, Foss S, Finstad T, Serincan U, Turan R, Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix. "Solid State Communications", 147, (2008), p.461.
  A.65 Aygun, G.,Turan, R., Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation. "THIN SOLID FILMS", 517, (2008), p.994.
  A.66 P. Caldelas, A.G. Rolo, M.J.M. Gomes, E. Alves, A.R. Ramos, O. Conde, R Turan, S, Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering. "Vacuum", 82, (2008), p.1466.
  A.67 Yilmaz E, Dogan I, Turan R, Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate. "Nuclear instruments & methods in physics research section b-beam interactions with materials and ato", 266, (2008), p.4896.
  A.68 T. Colakoglu, M. Parlak,, M. Kulakci, M, R. Turan, Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag-In-Se thin films. "Journal Of Physics D-Applied Physics", 41, (2008), p.115308.
  A.69 Yalcin S, Orer S, Turan R, 2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopy. "Spectrochimica acta part b-atomic spectroscopy", 63, (2008), p.1130.
  A.70 J. Wolowski, J. Badziak, A. Czarnecka, P. Parys, M. Pisarek, R Turan, M. Rosin, Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials. "Radiation Effects And Defects In Solids", 163, (2008), p.589.
  A.71 I.B. Akca, A. Dana, A. Aydinli, R. Turan, Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories. "Applied Physics Letters", 92, (2008), p.52013.
  A.72 Y.S.Ocak, M.Kulakçı, T.Kılıçoğlu, R.Turan, K.Akkılıç, Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode. "Synthetic Metals", 159, (2009), p.1603-1607.
  A.73 Imer, A. Gencer, Yerci, S., Alagoz, A. S., Kulakci, M., Serincan, U., Finstad, T, Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering. "Journal of Nanoscience and Technology", 19, (2009), p.525-531.
  A.74 Tetelbaum, D. I., Mikhaylov, A. N., Belov, A. I., Ershov, A. V., Pitirimova, E., Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide. "Physics of the Solid State", 51, (2009), p.409-416.
  A.75 Klason, P, Rahman, M. M., Hu, Q. -H., Nur, O.,Turan, R., Willander, M, Fabrication and characterization of p-Si/n-ZnO heterostructured junctions. "Microelectronics Journal", 40, (2009), p.706-710.
  A.76 I.Dogan, I.Yıldız, R.Turan, PL and XPS depth profiling of Si/Al2O3 co-sputtered films and evidence of the formation of silicon nanocrystals. "Physica E", 41, (2009), p.976-981.
  A.77 Ergin FB, Turan R, Shishiyanu ST, Yilmaz E, Effect of gamma-radiation on HfO2 based MOS capacitor. "Nuclear instruments & methods in physics research section b-beam interactions with materials and ato", 268, (2010), p.1482-1485.
  A.78 A. G. Imer, S. Yerci, A.S. Alagoz,M. Kulakci, U.Serincan, T.G. Finst , R. Turan, Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputteringtemperature annealing, Journal of Nanoscience and Technology. "Journal of Nanoscience and Technology", 10, (2010), p.525-531.
  A.79 Sahin D , Yildiz I, Gencer AI , Aygun G, Slaoui A, Turan R, Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing. "Thin Solid Films", 518, (2010), p.2365-2369.
  A.80 Ceyhun Bulutay, Mustafa Kulakci, Rasit Turan, Stark effect, polarizability, and electroabsorption in silicon nanocrystal. "Physical Review B", 81, (2010), p.125333-1-7.
  A.81 Urcan Guler, Rasit Turan, Effect of particle properties and light polarization on the plasmonic resonances in metallic nanoparticles. "Optics Express", 18, (2010), p.17322-17338.
  A.82 A. Akdag, E. Yilmaz, N.A.P Mogaddam, G. Aygun, A. Cantas, R. Turan, Ge nanocrystals embedded in SiO2 in MOS based radiation sensors. "NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATO", 268, (2010), p.3417-3420.
  A.83 Arife Gencer Imer, Ilker Yildiz, Rasit Turan, Fabrication of Si nanocrystals in an amorphous SiC matrix by magnetron sputtering. "Physica E", 42, (2010), p.2358-2363.
  A.84 Genişel MF, Uddin MN, Say Z, Kulakci M, Turan R, Gulseren O, Bengu E, Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films. "Journal of Applied Physics", 110, (2011), p.074906-1-10.
  A.85 Ocak YS, Kulakcı M, Turan R, Kilicoglu T, Gullu O, Analysis of electrical and photoelectrical properties of ZnO/p-InP. "Journal of Alloys and Compound", 509, (2011), p.6631-6631.
  A.86 Aygun G, Cantas A, Simsek Y., Turan R, 3. Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO(2) films. "Thin Solid Fims", 519, (2011), p.5820-5825.
  A.87 Ozdemir B, Kulakci M, Turan R, Unalan EH, Silicon nanowire – Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) heterojunction solar cells,. "Applied Physics Letters", 99, (2011), p.113510-113513.
  A.88 Ozdemir B, Kulakci M, Turan R, Unalan E, Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires. "Nanotechnology", 22, (2011), p.155606.
  A.89 O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan and A. Aydinli, Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors. "Journal of Applied Physics", 111, (2012), p.074509.
  A.90 T. Tansel , K. Kutluer , Ö. Salihoglu , A. Aydinli , B. Aslan, Y. Ergün, U. Seri, Effect of the Passivation Layer on the Noise Characteristics of Midwave Infrared InAs/GaSb Superlattice Photodiodes.. " IEEE Photonics Technology Letters", 24, (2012), p.790.
  A.91 B. Kaleli, M. Kulakci, R. Turan, Mechanisms of light emission from terbium ions (Tb3+) embedded in a Si rich silicon oxide matrix.. "Optical Materials", 34, (2012), p.1935-1939.
  A.92 O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan and A. Aydinli, Skin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors. "Journal of Physics D: Applied Physics", 45, (2012), p.365102.
  A.93 M. Isik, N.M. Gasanly, R. Turan, Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2, M. Isik, N.M. Gasanly, R. Turan.. "Physica B Condensed Matter", 407, (2012), p.4193-4197.
  A.94 O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R.Turan, Y. Ergun, A. Aydinli, "N" structure for type-II superlattice photodetectors . "APPLIED PHYSICS LETTERS", 101, (2012), p.073505.
  A.95 E.Yilmaz, E. Tugay, A. Akdag, I. Yildiz, M. Parlak, R. Turan, Surface morphology and depth profile study of Cd1-xZnxTe alloy nanostructure. " Journal of Alloys and Compounds, 545, 90-98 (2012)", 545, (2012), p.90-98.
  A.96 Ozgur Selimoglu, Rasit Turan, Exploration of the horizontally staggered light guides for high concentration CPV applications. "Optics Express, 20, 19137 (2012).", 20, (2012), p.19137.
  A.97 Tugay E, Yilmaz E, Turan R, Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors. "Journal of Vacuum Science and Technology A", 30, (2012), p.415.
  A.98 D. Korucu, A. Turut, R. Turan, S. Altindal, On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique. "SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY", 55, (2012), p.1604-1612.
  A.99 İ. Kabacelik, R.Turan, Germanium solar cells prepared by ion implantation. "Journal of optoelectronics and advanced materials", 15, (2013), p.948-953.
  A.100 I. Tanyeli, A. Bek, F. Es, R. Turan, Effect of surface type on structural and optical properties of Ag nanoparticles formed by dewetting. "Optics Express", 21, (2013), p.A798-A807.
  A.101 M. Karaman, M. Aydin, S. H. Sedani, K. Erturk, R. Turan, Low temperature crystallization of amorphous silicon by gold nanoparticle. "Microelectronic Engineering", 108, (2013), p.112-115.
  A.102 D. Korucu, A. Turut, R Turan, S. Altindal, Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes. "Materials Science in Semiconductor Processing", 16, (2013), p.344-351.
  A.103 F. Es, O. Demircioğlu, M. Günöven, M. Kulakci, HE. Unalan, R. Turan, Performance of nanowire decorated mono- and multi-crystalline Si solar cells. "Physica E", 51, (2013), p.71-74.
  A.104 O. Sal., M. Hos., T. Tan., K. Kut., A. Kilic, M. Aly., C. Sevik, R. Turan, Y.Er., Electronic and optical properties of 4.2 mu m”N” structured superlattice MWIR photodetectors. "Infrared Physics & Technology", 59, (2013), p.36-40.
  A.105 M. Isik, N.M. Gasanly, R. Turan, Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry. "Journal of Alloys and Compounds", 549, (2013), p.179-183.
  A.106 M. C. Gunendi, I. Tanyeli, G. B. Akguc A. Bek, R. Turan, O. Gulseren, Understanding the realistic plasmonic properties of dewetting formed Ag nanoparticles in large area solar cell applications 21, 18344-18353 (2013).. "Optics Express", 21, (2013), p.18344-18353.
  A.107 T. Tansel, K. Kutluer, A. Muti, O. Salihoglu, A. Aydinli, R. Turan, Low-frequency noise behavior at reverse Bias Region in InAS/GaSb Superlattice Photodiodes on Mid-Wave Infrared,. "Infrared Technology and Applications", 8704, (2013), p.87040Y.
  A.108 Y. Ergun, M. Hostut, T. Tansel, A. Muti, A. Kilic, R. Turan, A. Aydinli, High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers. "Infrared Technology and Applications", 8704, (2013), p.870414.
  A.109 E. Mulazimoglu, S. Coskun, M. Gunoven, B. Butun, E. Ozbay, R. Turan, H.E. Unalan, Silicon nanowire network metal-semiconductor-metal photodetectors. "Applied Physics Letters", 103, (2013), p.083114.
  A.110 H. Nasser, Z. Saleh, E. Ozkol, M. Gunoven, A. Bek, R. Turan, Fabrication of Ag Nanoparticles Embedded in Al:ZnO as Potential Light-Trapping Plasmonic Interface for Thin Film Solar Cells. "Plasmonics", 8, (2013), p.1485-1492.
  A.111 M. Kulakcı, T. Colakoglu, B. Ozdemir, M. Parlak, H.E. Unalan, R. Turan, Silicon Nanowire-silver indium selenide heterojunction photodiodes. "Nanotechnology", 24, (2013), p.375203.
  A.112 P. Aurang, O. Demircioğlu, F. Es, R. Turan and H. E. Unalan, ZnO Nanorods as Antireflective Coatings for Industrial Scale Single Crystalline Silicon Solar Cells. "Journal of the American Ceramic Society", 96, (2013), p.1253-1257.
  A.113 Kulakci M, Es F, Ozdemir B, Unalan E, Turan R, Application of Si Nanowires Fabricated by Metal Assisted Etching to Crystalline Si Solar Cell. "IEEE Journal of Photovoltaics", 3, (2013), p.548.
  A.114 Kulakci M, Turan R, Improvement of Light Emission from Tb-doped Si-based MOS-LED Using Excess Si in the Oxide Layer. " Journal of Luminescnce", 137, (2013), p.37-42.
  A.115 E. Mulazimoglu, G. Nogay, R. Turan, H.E. Unalan, Enhanced localized surface Plasmon resonance obtained in two step etched silicon nanowires decorated with silver nanoparticles,. "Applied Physics Letters", 103, (2013), p.143124.
  A.116 M.Isik, M.N. Gasanly, R. Turan, Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements. "Physica B-Condensed Matter", 408, (2013), p.43-45.
  A.117 T Tansel, K. Kutluer, A. Muti, O Salihoğlu, A Aydinli, R. Turan, Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes,. "Applied Physics Express", 6, (2013), p.032202.
  A.118 T. Yildirim, N.M. Gasanly, R. Turan, Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements. "Acta Physics Polonica", 123, (2013), p.766-769.
  A.119 Akgul, FA ; Akgul, G; Yildirim, N; Unalan, HE; Turan, R, Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films. "Materials Chemistry And Physics", 147, (2014), p.987-995.
  A.120 Mirjafari, M ; Balog, RS ; Turan, R, Multiobjective Optimization of the DC-DC Stage of a Module-Integrated Inverter Based on an Efficiency Usage Model. "IEEE Journal of Photovoltaics", 4, (2014), p.906.
  A.121 Galioglu S,Isler M,Demircioglu Z, Koc M,Vocanson F, Destouches N,Turan R,Akata B, Photochromic behavior of silver nanoparticle incorporated titanosilicate ETS-10 films. "Microporous And Mesoporous Materials", 196, (2014), p.136-144.
  A.122 Saleh ZM, Nasser H, Ozkol E, Gunoven M, Altuntas B, Bek A, Turan R, Enhanced Optical Absorption and Spectral Photocurrent in a-Si:H by Single- and Double-Layer Silver Plasmonic Interfaces. "Plasmonics", 9, (2014), p.357-365.
  A.123 Nogay, G; Ozkol, E; Ilday, S; Turan, R, Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique. "Vacuum", 110, (2014), p.114-120.
  A.124 Tascioglu, İ ; Farooq, WA ; Turan, R ; Altindal, S ;Yakuphanoglu, F, Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes. "Journal of Alloys and Compound", 590, (2014), p.157.
  A.125 Ilday, S; Nogay, G; Turan, R, Spectroscopic ellipsometry study of Si nanocrystals embedded in a SiOx matrix: Modeling and optical characterization. "Applied Surface Science", 318, (2014), p.256-261.
  A.126 Tugay, E; Ilday, S; Turan, R; Finstad, TG, Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime. "Journal of Luminescence", 155, (2014), p.170-179.
  A.127 CakmakH,Arslan E,RudzinskiM,Demirel P,UnalanHE,StrupinskiW,TuranR,OzturkM,OzbayE, Indium rich InGaN solar cells grown by MOCVD. "Journal of Material Science- Materials in Electronics", 25, (2014), p.3652-3658.
  A.128 Borra, MZ; Gullu, SK; Es, F; Demircioglu, O;Gunoven, M; Turan, R; Bek A, A feasibility study for controlling self-organized production of plasmonic enhancement interfaces for solar cells. "Applied Surface Science", 318, (2014), p.43-50.
  A.129 Ozmen, O.T. ; Karaman, M Turan, R, Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique. "Thin Solid Films", 551, (2014), p.181.
  A.130 Salihoglu, O; Muti, A;Turan, R; Ergun, Y;Aydinli, A, Low dark current N structure superlattice MWIR photodetectors. "Proceedings of SPIE", 9070, (2014), p.90712.
  A.131 Turan, R; Demir, U; Gulseren, O; Varga, K, NANOTR9: 9th Nanoscience and Nanotechnology Conference. "Applied Surface Science", 318, (2014), p.1.
  A.132 Cantas, A; Aygun, G; Turan, R, Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-kappa HfO2/Hf/Si thin film. "Applied Surface Science", 318, (2014), p.199-205.
  A.133 Saleh, ZM;Nogay, G ; Ozkol, E ; Yilmaz, G ; Sagban, M ; Gunes, M ; Turan, R, Atmospheric aging and light-induced degradation of amorphous and nanostructured silicon using photoconductivity and electron spin resonance. "Canadian Journal of Physics", 92, (2014), p.713-717.
  A.134 CosentinoS,OzenES,RacitiR,MioAM,Nicotra,SimoneF,TuranR,TerrasiA,AydınlıA,MirabeS, Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4. "Journal of Applied Physics", 115, (2014), p.043103.
  A.135 Zeynep Deniz Eygi,Mustafa Kulakçı,Raşit Turan, Effect of Au on the crystallization of germanium thin films by electron-beam evaporation. "Applied Surface Science", 318, (2014), p.116-120.
  A.136 G Akgul, E. Mulazimoglu, F.A. Akgul, H.E. Unalan, R. Turan, Fabrication and Characterization of Copper Oxide-Silicon Nanowire Heterojunction Photodiodes. "Journal of Physics D: Applied Physics", 47, (2014), p.065106.
  A.137 MIRABELLA S. GORDON I. VALANTA J. TURAN R. ATWATER H., Proceedings of the 2014 E-MRS spring meeting symposium Y-Advanced materials and characterization techniques for solar cells II. "SOLAR ENERGY MATERIALS AND SOLAR CELLS", 135, (2015), p.1.
  A.138 AYDIN TANKUT, KARAMAN MEHMET, ILKER YILDIZ, CANLI SEDAT, TURAN RAŞİT, Effect of Al vacuum annealing prior to a-Si deposition on aluminum-induced crystallization.. "Physica Status Soldi A Appications and Material Science", 212, (2015), p.2702-2707.
  A.139 NASSER HISHAM,ENGIN OZKOL,BEK ALPAN,TURAN RAŞİT, High haze nature of textured Al:ZnO with Ag nanoparticles for light management in thin film solar cells. "OPTICAL MATERIALS EXPRESS", 5, (2015), p.932-942.
  A.140 Firat Es, EmineHCiftpinar,Olgu Demircioglu,Mete Gunoven,Mustafa Kulakci,TURAN R., Performance of solar cells fabricated on black multicrystalline Si by nanowire decoration. "APPLIED SURFACE SCIENCE", 332, (2015), p.266-271.
  A.141 Funda Aksoy Akgul, Guvenc Akgul,Gullu Hasan Huseyin,Husnu Emrah Unalan,TURAN RAŞ, Improved diode properties in zinc telluride thin film-silicon nanowire heterojunctions. "PHILOSOPHICAL MAGAZINE", 95, (2015), p.1164-1183.
  A.142 ZAKI MUHAMMED SALEH, ILKER YILDIZ, ENGIN OZKOL, METE GUNOVEN, KURTULUS ABAK, CAN, Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H. "JOURNAL OF NANOPARTICLE RESEARCH", 17, (2015), p.19.
  A.143 Funda Aksoy Akgul, Akgul Guvenc, Gullu Hasan Huseyin, Unalan Husnu Emrah, TURAN, Enhanced diode performance in cadmium telluride-silicon nanowire heterostructures. "Journal of Alloys and Compounds", 644, (2015), p.131-139.
  A.144 Mustafa Hostut,M. Alyoruk,TANSEL TUNAY,A.Kilic,TURAN RAŞİT,A. AydınlıY. ERGUN, N-structure based on InAs/AlSb/GaSb superlattice photodetectors. "SUPERLATTICES AND MICROSTRUCTURES", 79, (2015), p.116-122.
  A.145 AYDIN TANKUT, KARAMAN MEHMET, ENGIN OZKOL, CANLI SEDAT, TURAN RAŞİT, Structural properties of a-Si films and their effect on aluminum induced crystallization. "AIP Advances", 5, (2015), p.107114.
  A.146 Ismail Kabacelik, Mustafa Kulakci, TURAN RAŞİT, Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates. "JOURNAL OF CRYSTAL GROWTH", 419, (2015), p.7-11.
  A.147 S. İ, ÖF. İ,H, R.,P, Ty J.,M, I.,N. G,İ.., M.Z, B.M,T.D,T.H,F.D,S.B,K.H, R.TURAN, Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network. "NANO LETTERS", 16, (2016), p.1942-1948.
  A.148 Sedat Bilgen, Fırat Es, Raşit TURAN, Comparison of mechanical and ultrasonic agitation methods for mono c-Si texturing. "PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE", 213, (2016), p.2721-2726.
  A.149 Güvenç Akgün, Funda Aksoy Güvenç,H. Emrah Ünalan, Raşit Turan, Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes. "PHILOSOPHICAL MAGAZINE", 96, (2016), p.1093-1109.
  A.150 Fırat Es, Mustafa Kulakçı, Raşit Turan, An Alternative Metal-Assisted Etching Route for Texturing Silicon Wafers for Solar Cell Applications. "IEEE JOURNAL OF PHOTOVOLTAICS", 6, (2016), p.440-446.
  A.151 Karaman, Mehmet,Ozmen, Ozge TuzunSedani, Salar Habibpur,Ozkol, Engin,Turan Raşit, Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films. "PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE", 213, (2016), p.3142-3149.
  A.152 Evrin Tugay, Raşit Turan, Investigation of Photoluminescence Mechanisms from SiO2/Si:SiO2/SiO2 Structures in Weak Quantum Confined Regime by Deconvolution of Photoluminescence Spectra. "JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY", 16, (2016), p.4052-4064.
  A.153 Fırat ES, Gülsen BAYTEMİR, Mustafa KULAKÇI, Raşit TURAN, Multi-crystalline silicon solar cells with metal-assisted nano-texturing using HNO3 as hole injection agent. "PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS", 10, (2016), p.866-869.
  A.154 İsmail Kabaçelik, Mustafa Kulakçı, Raşit TURAN, Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications. "MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING", 56, (2016), p.368-372.
  A.155 Funda Aksoy Akgün, Güvenç Akgün,Raşit Turan, H. Emrah Ünalan, All Solution-Based Fabrication of Copper Oxide Thin Film/Cobalt-Doped Zinc Oxide Nanowire Heterojunctions. "JOURNAL OF THE AMERICAN CERAMIC SOCIETY", 99, (2016), p. 2497-2503.
 

Conference Papers

  A.1 B. Aslan, R. Turan, O. Nur, M. Karlsteen, M. Willander, Observation of layer relaxation in a SixGe1-x structure by using a Schottky junction. "Material Resarch Society (MRS) Fall 99 Meeting, Boston USA", 640, (1999).
  A.2 B. Aslan, R. Turan, Internal photoemission spectroscoy for a PtSi/p-Si Schottky junction. "International School of Solid State Physics, Erice Italy", (1999).
  A.3 B Aslan, R. Turan, Internal photoemission spectroscopy for a PtSi/p-Si Scottky junction. "16Th Course of the International School of Solid State Physics", (2000), p.330.
  A.4 B.Aslan, R. Turan, O. Nur, M. Karlsteen, M. Willander, Effect of Layer Relaxation on The Internal Photoemission in PtSi/Si1-xGex Schottky Barrier Type Infrared Detectors. "Material Research Society Symposium Proceeding,", 607, (2000), p.235-240.
  A.5 E. S. Marstein, A. E. Gunnæs, U. Serincan, R. Turan, A. Olsen, T. G. Finstad, Ion beam synthesis of Ge nanoclusters in SiO2. "12th International conference on surface modification of materials by ion beams,", (2002).
  A.6 A.E. Gunnæs, E.S. Marstein, U. Serincan, R. Turan, A. Olsen, T.G. Finstad, The effect of processing parameters on the formation of Ge nanocrystals in SiO2. "International conference on mateials, EuroMat 2002 Materials Congress", (2002).
  A.7 Raşit Turan, Uğur Serincan, A. Guennes, Terje G. Finstad, Structural And Optical Properties of Semiconductor Nanocrystals Embedded in SiO2 Matrix By Ion Implantation . "11. International Conference on Machine Design and Production", (2004).
  A.8 S.Yerci, U.Serincan, M.Kulakci, F.Ay, A.Aydinli, R.Turan, Evolution of Si-O-Si stretching mode of SiO2 during the formation of Ge and Si nanocrystals by ion implantation. "Proceedings of the First International Workshop on Semiconductor Nanocrystals,SEMINANO2005", 2, (2005), p.223-227.
  A.9 Rasit Turan, Structural and Optical Properties of Si and Ge Nanocrystals embedded in SiO2 matrix by Ion Implantation . "14th International Conference on Surface Modification of Materials by Ion Beam (SMMIB05)", (2005).
  A.10 A. Dana, O. Ergun, M. Anutgan, T. Aliyeva, A. Aydinli, R. Turan, Charging dynamics of MOS capacitors containing PECVD grown germanium nanocrystals. "Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO2005", 1, (2005), p.197-201.
  A.11 S.Yerci, U.Serincan, I.Doğan, A.Seyhan, R.Turan, M.Barozzi, M.Barsani, Optical and Structural Properties of Silicon Nanostructures Formed by Ion Implantation in the Sapphire Matrix. "E-MRS 2006 Meeting", (2006).
  A.12 Arif Sinan Alagöz, Rasit Turan, Synthesizing Silicon Nanocrystals in Silicon Dioxide Matrix by Magnetron Sputtering Technique for Optical and Electrical Applications. "TNT2006", (2006).
  A.13 M.Rosinski, J.Badziak, A.Czarnecka, P.Gasior, P.Parsy, J.Wolowski, R.Turan, Investigation of Ge and Al deposition and ion implantation induced by a low fluence laser pulses for production of nanocrystals in SiO2 and Al2O3 substrates. "Nanomat 2006", (2006).
  A.14 P.Candelas, S.Yerci, A.G.Rolo, A.Chahboun, O.Conde, E.Alves, M.J.M.Gomes,R.Turan, Structural and Optical Properties of Ge NAnocrystals Grown by RF-Sputtering Technique. "ICSNN-2006 Conference", (2006).
  A.15 S.Yerci, I.Yildiz, A.Seyhan, M.Kulakçı, U.Serincan, M.Shandalov, Y.Golan,R.Turan, Structural and Optical Properties of Al2O3 with Si and Ge Nanocrystals. "Proc.of the Mater.Res.Soc.Symp", 958, (2006), p.L07-06.
  A.16 S.Yerci, I.Doğan, M.S.Tokay, M.Genisel, U.Serincan, R.Turan, A.Aydinli, Evolution of Silicon Nanocrystals in Sapphire by ion implantation and the Origin of visible Photoluminescence. "ICSNN-2006 Conference", (2006).
  A.17 M.Rosinski, J.Badziak, A.Czarnecka, P.Gasior, P.Parsy, M.Pisarek, R.Turan, Implantation and sputtering of Ge ions into SiO2 substrates with the use of ofions produced by repetitive laser pulses. "Materials Science in Semiconductor Processing", 9, (2006), p.655-658.
  A.18 M.Rosinski, J.Badziak, A.Czarnecka, P.Gasior, P.Parsy, M.Pisarek, R.Turan, Implantation and sputtering of Ge ions into SiO2 substrates with the use of ofions produced by repetitive laser pulses. "E-MRS 2006 Meeting", (2006).
  A.19 Arif Sinan Alagöz, Rasit Turan, Synthesis and Characterization of Ge Nanocrystals in SiO2 Matrix Prepared by Magnetron Sputtering Technique for Flash Memory Applications. "NANOMAT2006", (2006).
  A.20 R Rosinski, J. Badziak, A. Czarnecka, P. Gasior, P. Parys, J. Wolowski, R. Turan, Investigation of laser induced co-deposition of layers of semicondcutor materials and laser implanted ion stream for nanocrystal formatiom. "3rd International Workshop on Semiconductor Nanostructures, Bad Honef, Germany", (2007), p.20.
  A.21 Mustafa Kulakci, Ayse Seyhan, Rasit Turan, Ugur Serincan, Electric Field Dependence of Photoluminescence from Si Nanocrystals Embedded in SiO2 matrix. "3rd International Workshop on Semiconductor Nanostructures, Bad Honef, Germany", (2007), p.38.
  A.22 Nader Moghaddam, Selcuk Yerci, Rasit Turan, Steiner Foss, Terje G. Finstad, Evolution of SiGe nanocrystals in SiO2 matrix. "3rd International Workshop on Semiconductor Nanostructures, Bad Honef, Germany", (2007), p.55.
  A.23 P Basa, G. Battistig, Z. J. Horvath, M. Kulakci, R. Turan, Electrical and Memory Behaviour of Ge nanocrystals embedded in Sputtered SiO2. "3rd International Workshop on Semiconductor Nanostructures, Bad Honef, Germany", (2007), p.57.
  A.24 Arife Gencer Imre, A. Sinan Alagöz, A. Seyhan, M. Kulakçı, an R. Turan, Effects of Hydrogen Annealing on the Photoluminescence Characteristics of Si Nanocrystal Produced by Ion Implantation and RF Magnetron Sputtering. "3rd International Workshop on Semiconductor Nanostructures, Bad Honef, Germany", (2007), p.63.
  A.25 Wolowski J, Rosinski M , Badziak J, Czarnecka, A, Parys P, Turan R,Yerci, S, Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses. "AIP CONFERENCE PROCEEDINGS ( PLASMA 2007 )", 993, (2008), p.383.
  A.26 Rasit Turan, Mustafa Kulakci, Ceyhun Bulutay, Ugur Serincan, Quantum Confined Stark Effect in Si Nanocrystals. "Material Research Society (MRS), December 1-5, Boston, USA", (2008).
  A.27 Ilker Doğan, Mustafa Kulakci, Rasit Turan, Selcuk Yerci, Ge and SiGe nanocrystals Formed in Transparent Matrices for the Next Generation Solar Cell . "Nanomat 2008, International Conference on Photovoltaic materials and devices", (2008).
  A.28 Ercan Yılmaz and Raşit Turan, Use of Al2O3 as an absorbing Layer in Radiation Sensors. "Condensed Matter Physics Conference of Balkan Countries, Mugla University , Mugla ,", (2008).
  A.29 İlker Doğan, Selcuk Yerci, Rasit Turan, Formation of Si Nanocrystals in Al2O3 Matrix . "European Material Research Society, (E-MRS), Spring Meeting, 2008 May, Strasbourg, France", (2008).
  A.30 Seçkin Öztürk, Kübra Kamışoğlu, Burcu Akata Kurç, Rasit Turan, Controlled assemble and microfabrication of zeolite particles on SiO_2 substrates for potential biosensor applications. "Material Research Society (MRS) Fall Meeting, Boston, December 1-5, USA", (2008).
  A.31 Gencer A., Yildiz I., Karaman M., Turan R, Fabrication and characteristasion of Si nanocrystals embedded in SiC matrix by magnetron sputtering for third generation solar cells. "Proceeding of 24th European Photovoltaic Solar Energy Conference", (2009), p.425-428.
  A.32 Z.D.Eygi, U.Bostancı, R.Turan, Ç.Erçelebi, Optimization of hydrogenated amorphous silicon (a-Si) thin film deposited by RF magnetron deposited by magnetron sputtering for A-Si/c-Si photovoltaic applications. "Proceeding of 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Ger", (2009), p.2812-2815.
  A.33 Ozturk, S., Kamisoglu, K., Turan, R, Akata, B, Controlled assemble and microfabrication of zeolite particles on SiO2 substrates for potential biosensor applications. "Materials and Devices for Smart Systems III, Book Series : Material Research Society Symposium Proc", 1129, (2009), p.91-96.
  A.34 Ayse Seyhan, Urcan Guler, Elisabetta Borsella, Rasit Turan, PHOTLUMINESCENCE BLEACHING IN FREE STANDING Si NANOCRYSTALS PREPARED BY LASER ASSISTED SILANE PROLYSIS. "European Materials Research Society (E-MRS) Spring Meeting, Strasbourg", (2010), p.J1-4.
  A.35 Umit Keles, Ceyhun Bulutay, Mustafa Kulakci, Rasit Turan, Stark Effect, polarizability and electroabsorption in silicon and germanium nanocrystals. "European Materials Research Society (E-MRS) Spring Meeting, Strasbourg", (2010).
  A.36 Ayse Seyhan, Urcan Guler, Elisabetta Borsella, Rasit Turan, PHOTLUMINESCENCE BLEACHING IN FREE STANDING Si NANOCRYSTALS PREPARED BY LASER ASSISTED SILANE PROLYSIS. "European Materials Research Society (E-MRS) Spring Meeting, Strasbourg", (2010), p.J1-4.
  A.37 Mustafa Kulakci, Buket Kaleli, Rasit Turan, Photoluminescence and electroluminescence from Tb doped silicon rich SiO2 prepared by magnetron sputtering. "Material Research Society (MRS) Fall Meeting", (2010).
  A.38 Umit Keles, Ceyhun Bulutay, Mustafa Kulakci, Rasit Turan, Stark Effect, polarizability and electroabsorption in silicon and germanium nanocrystals. "European Materials Research Society (E-MRS) Spring Meeting, Strasbourg", (2010).
  A.39 U. Guler and R. Turan, Plasmonic Oscillations in Metal Nanoparticle Arrays Engineered by Electron Beam Lithography. "Material Research Society (MRS) Spring Meeting, San Francisco", (2010).
  A.40 Ö. Tüzün, M. Karaman, R. Turan, A. Slaoui, Ş. Oktik, POLYSILICON THIN FILM SOLAR CELLS FABRICATED BY SPC TECHNIQUE WITH A NOVEL CRYSTALLIZATION PROCESS. "26th European Photovoltaic Solar Energy Conference and Exhibition", (2010).
  A.41 O. Demircioğlu, F. Es, M. Kulakcı, R. Turan, EFFECTS OF GROOVE GOEMETRY TO THE EFFICIENCY OF BURIED CONTACT C-SI SOLAR CELLS. "26th European Photovoltaic Solar Energy Conference and Exhibition (26th EU PVSEC)", (2011).
  A.42 M Kulakci, B Ozdemir, Firat Es, HE Unalan and R Turan, Si nanowires prepared by a novel etching techique to standard crystalline silicon solar cells. "26th European Photovoltaic Solar Energy Conference and Exhibition", (2011).
  A.43 R Turan, M Özanbas, L Toppare, M Parlak, C Ercelebi, HE Unalan, A new Excellence Center on Photovoltaics : GÜNAM , The Center for Solar Energy Research and Applications of Turkey. "26th European Photovoltaic Solar Energy Conference and Exhibition (26th EU PVSEC)", (2011).
  A.44 Serim Ilday, Nader A. P. Mogaddam, Rasit Turan, Investigation on Silicon-nanosponge Structures Prepared by Magnetron Sputtering for Photovoltaic Applications. "26th European Photovoltaic Solar Energy Conference and Exhibition (26th EU PVSEC)", (2011).
  A.45 G. Nogay, S. Ilday, E. Ozkol, R. Turan, “Synthesis and characterization of sponge-like silicon nanostructures for photovoltaic applications”. "Photovoltaic Technical Conference - Thin Film & Advanced Silicon Solutions", (2012).
  A.46 O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan, C. Kocabas, A. Aydinli, Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3. " Proceedings of SPIE", 8353, (2012), p.83530Z.
  A.47 F. ES, M. Kulakcı, E.H. Çiftpınar, R. Turan, Metal Assisted Texturing for Multi Crystalline Si Solar Cells. "27th EU PVSEC", (2012).
  A.48 I. Tanyeli, H. Nasser, F. Es, A. Bek, R. Turan, Formation of and Light Scattering from Plasmonic Ag Nanoparticles on Solar Cell Thin Film Materials. "EMRS Spring Meeting", (2012).
  A.49 M. Kulakci, H. E. Unalan, S. Ilday, G. Nogay, R. Turan, Si nanostructures for an efficient light harvesting in photovoltaic solar cells. "XXI International Materials Research Congress", (2012).
  A.50 10. S. H. Sedani, M. Karaman, K. Ertürk, M. Aydın, R. Turan, Low Temperature Crystallization of Amorphous Silicon by Gold Nanoparticle. "7th International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT 2012)", (2012).
  A.51 S. H. Sedani, M. Karaman, K. Ertürk, R. Turan, Boron and Phosphorus Doping Optimization of Electron Beam Evaporated Amorphous Silicon by Using Effusion Cell for Solar Cell Applications. "7th International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT 2012", (2012).
  A.52 G. Nogay, S. Ilday, R. Turan, Spectroscopic Ellipsometry Studies of nc-Si/a-Si and nc-Si/SiOx Systems: Optical Characterization of Crystallization. "27th EU PVSEC", (2012).
  A.53 S. Ilday, R. Turan, E. Sungur Ozen, S. Gundogdu, A. Aydinli, 1. S. Ilday, R. Turan, E. Sungur Ozen, S. Gundogdu, A. Aydinli “Synthesis and characterization of sponge-like silicon nanostructures for photovoltaic applications” E-MRS Spring Meeting, Strasbourg, France, May 14-18, (2012) – Oral / Sözlü sunum. "E-MRS Spring Meeting", (2012).
  A.54 I. Tanyeli, H. Nasser, F. Es, A. Bek, R. Turan, Plasmonic light scattering from Ag nanoparticles fabricated on ITO and ZnO thin films. "Photovoltaic Technical Conference", (2012).
  A.55 Es F, Demircioglu O, Kulakci M, Unalan HE, Turan R, Proceedings of SPIE, 8373, Light management on industrial size c-Si solar cells by Si nanowires fabricated by metal-assisted etching. "Conference on Micro- and Nanotechnology Sensors, Systems, and Applications IV", 8373, (2012), p.837312.
  A.56 Z. M. Saleh, H. Nasser, M. Gunoven, E. Ozkol, B. Altuntas, A. Bek, R Turan, Enhancement of optical absorption in a-SI:H films by silver nanoparticle plasmonic interface. "28th European PV Solar Energy Conference and Exhibition (EU PVSEC), Sep 30-Oct 4, Paris", (2013), p.371.
  A.57 Guvenc Ogulgonen, Talat Ozden, Ugur Yardim, Rasit Turan and Serkan Kincal, A low cost outdoor testing facility for detailed photovoltaic device performance characterization. "physica status solidi (c)", 12, (2015), p.1267-1271.
  A.58 Deniz Cihan Gunduz, Aydin Tankut, Salar Sedani, Mehmet Karaman and Rasit Turan, Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide. "physica status solidi (c)", 12, (2015), p.1229-1235.
  A.59 Zaki M. Saleh, Hisham Nasser, Engin Özkol, Alpan Bek and Raşit Turan, Dependence of plasmonic enhancement of photocurrent in a-Si:H on the position and thickness of SiNx spacer layers. "physica status solidi (c)", 12, (2015), p.1220-1223.
  A.60 Talat Ozden, Ugur Yardım, Bulent G. Akinoglu and Rasit Turan, Outdoor efficiency analyses and comparison of on-grid CdTe and µc-Si/a-Si thin-film PV systems for three years in Ankara – Turkey (pages 1283–1287). "physica status solidi (c)", 12, (2015), p.1283–1287.
  A.61 Prof. Dr. Raşit Turan, Chair of SolarTR-3 conference. "Phys. Status Solidi C", 12, (2015), p.1196-1197.
  A.62 Hisham Nasser, Zaki M. Saleh, Engin Özkol, Alpan Bek and Raşit Turan, Advanced light trapping interface for a-Si:H thin film. "physica status solidi (c)", 12, (2015), p.1206-1210.
  A.63 M. ÜNAL,H. NASSER,M.GÜNÖVEN,İ.SÖKMEN,A .TANKUT, R.TURAN, Effect of aluminum thickness and etching time of aluminum induced texturing process on soda lime glass substrates for thin solar cell applications . " Phys. Status Solidi C", 12, (2015), p.1201-1205.
  A.64 Zeynep Demircioğlu, Engin Özkol, Hisham Nasser and Raşit Turan, Low temperature aluminum doped zinc oxide thin film deposition on ultra-thin flexible glass and PET substrates by RF magnetron sputtering. "physica status solidi (c)", 12, (2015), p.1215-1219.
  A.65 Raşit Turan, Mehmet Güneş, Serdar Sarıciftci, Canan Varlıklı, Third Turkish Solar Electricity Conference (SolarTR-3). "Phys. Status Solidi A", 212, (2015), p.1193-1293.
  A.66 AltınolukSH,ÇiftpınarEH,DO,EsF,BaytemirG,AkarO,AydemirA,Saraç A,AkınTTuranR., Light trapping by micro and nano-hole texturing of single-crystalline silicon solar cells. "PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016", 92, (2016), p.291-296.
  A.67 Demircioğlu O,Es F,Çiftpınar EH, Zeybek A,Tuncer C,Turan R., Optimisation and design of PV modules for the application on bus roof-top and system integration for solar cooling. "PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 4", 13, (2016), p.159-162.

Book and Chapter in a Book

  A.1 L. Pavesi, R Turan, Introduction. "Si Nanocrystals : Fundamentals, Synthesis and Applications", (2010), p.1-4.
  A.2 S. Yerci, I Dogan, S. Seyhan, A. Gencer, R. Turan, Characterization of Si nanocrystals. "Si Nanocrystals : Fundamentals, Synthesis and Applications", (2010), p.583-610.

Publications (NATIONAL)

 

Journal Papers

  A.1 B. Aslan, R. Turan, Internal photoemission spectroscopy for a PtSi/p-Si Scottky junction. "Turkish Journal of Physics", 24, (2000), s.577-585.
  A.2 M. Sahin, S. Ozder, R. Turan, Properties of MOS Capacitors Produced on SiGe formed by Ge-Implanted Si. "Turkish Journal of Physics", 25, (2000), s.43-52.
  A.3 Raşit TURAN, Uğur SERİNCAN, Giray KARTOPU, Terje G. FINSTAD, Structural And Optical Properties of Si And Ge Nanocrystals Embedded in Sio2 Matrix By Ion Implantation. "Sigma", 2004, (2004), s.1-12.
 

Conference Papers

  A.1 Mine Bahçeci , Lütfi Özyüzer, Gülnur Aygün, Raşit Turan, Darbeli lazer aşındırma yöntemiyle nanoboyutta üretilmiş SiO2 parçacıkların karakterizasyonu. "Denizli Malzeme Sempozyumu ve Sergisi , 14-15-16 Nisan 2004", (2004), s.142-146.
  A.2 A. Seyhan, O. Karabulut, B. G. Akınoğlu, B. Aslan, R. Turan, Katlı GaSe’nin Optik Anizotropisinin Fotoışıma ve FTIR spektroskopisi ile incelenmesi. "XI. yoğun Madde Fiziği Toplantısı, Gazi Üniversitesi", (2004), s.88.
  A.3 G. Aygun, E. Attanasova, R. Turan, Tz. Babeva, Electrical and Optical Properties of Nd:YAG Laser Grown Si Oxides.. "22. Turkish Physical Society Conference, Bodrum 14 – 17 September, 2004, p.177", (2004), s.177.
  A.4 U. Serincan and R. Turan, Observation of Si Nanocrystal Distrubition By Photoluminescence Spectroscopy. "Turkish Physical Society 22nd Physics Meeting, September 13-17, 2004.", (2004).
  A.5 G. Aygun, E. Attanasova, R. Turan, Nd:YAG Puls Lazeri Aracılığıyla büyütülen Si oksitlerinin Yapısal, Kimyasal, Elektriksel ve Optiksel Özellikleri. "XI Yoğun Madde Fiziği Ankara Toplantısı, Ankara – Turkey, Aralık 2004.", (2004), s.17.
  A.6 U.Serincan, M,Kulakçı, R.Turan, Luminescence Properties of Amorphized and Recrystallized Si Nanocrystals in SiO2 Matrix. "NanoTR-I Nanoscience and Nanotechnology 2005", (2005), s.34.
  A.7 S.Yerci, U.Serincan, M.Kulakçı, R.Turan, FTIR Study of SiO2 Matrix Containing Si and Ge Nanocrystals Formed by Ion Implantation. "NanoTR-I Nanoscience and Nanotechnology 2005", (2005), s.35.
  A.8 Buket Kaleli, Mustafa Kulakci, Rasit Turan, Effect of Annealing Conditions on Light Emission from Terbium Ions (Tb3+) Embedded in a Matrix. "Proceedings of Nanoscience and Nanotechnology 2009 Meeting in Turkey (NanoTR5), June 8-12, 2009", (2009), s. 258.
  A.9 Nader A. P. Mogaddam, Ayse Seyhan, Arife Gencer Imer and Rasit Turan, Origin of PL from Si Nanocrystals Embedded in SiO2 Matrix in Weak Quantum Confined Regime. "Proceedings of Nanoscience and Nanotechnology 2009 Meeting in Turkey (NanoTR5), June 8-12, 2009", (2009), s.253.
  A.10 Shishiyanu S., Mogaddam N.A.P., Yılmaz E. ve Turan R, Effect of Gamma Radiation on Raman Spectra of Ge Nanocrystals embedded in SiO2. "Proceedings of Nanoscience and Nanotechnology 2009 Meeting in Turkey (NanoTR5), June 8-12, 2009", (2009), s.265.
  A.11 Yılmaz E., Dogan I. and Turan R., Improvement Sensitivity in MOS Based Radiation Sensors by Using Al2O3 Layer Fabricated on Si Substrate. "Material Research Society, Spring 2009 Meeting, San Francisco, April 13 - 17, 2009, USA", (2009).
  A.12 Urcan Guler, Seckin Ozturk, Mustafa Kulakci, Sedat Canli, Rasit Turan, Effect of using thin transparent conductive layer on plasmonic oscillations of nanoparticles fabricated by e-beam lithography. "International Conference on Materials for Advanced Technologies 2009, June 28 – July3, 2009, S", (2009).
  A.13 Urcan Guler, Rasit Turan, Metal nanoparticles for plasmonic solar cell applications. "Proceedings of Nanoscience and Nanotechnology 2009 Meeting in Turkey (NanoTR5), June 8-12, 2009", (2009), s.386.
  A.14 Z.D.EYGİ, U.BOSTANCI, R.TURAN, Ç. ERÇELEBİ, Characterization of the Amorphous Silicon (a-Si:H) Thin Films Deposited by RF Magnetron Sputtering for a-Si/c-Si Heterojunction Solar Cells. "", (2009).
  A.15 H. Efeoğlu, T. Karacali, R. Turan, I. Doğan, Al doping of ZnO films on SiO2/Si substrates and band edge luminescence. "Proceedings of 5. Ulusal Nanobilim ve Nanoteknoloji Konferansı (NanoTR5)", (2009), s.284.
  A.16 Rasit Turan, Semiconductor and metal nanostructures for the next generation solar cells.. "Proceedings of Nanoscience and Nanotechnology 2009 Meeting in Turkey (NanoTR5), June 8-12, 2009", (2009), s.387.
  A.17 G. Nogay, S. Ilday, R. Turan, K-H. Heinig, D. Friedrich, G. Nogay, S. Ilday, R. Turan, K-H. Heinig, D. Friedrich. "SolarTR-2", (2012).
  A.18 S. Gündogdu, E. Sungur Özen, S. Ilday, R. Turan, A. Aydınlı, Synthesis of silicon nanocrystals by laser annealing of silicon rich oxides. "8th Nanoscience and Nanotechnology Conference (NanoTR 8)", (2012).
  A.19 F. Es, M. Kulakcı, O. Demircioğlu, E.H. Çiftpınar, R. Turan, A New Selectıve Emıtter Technıque Based On Sıngle Step Dopıng For Hıgh Effıcıency Crystallıne Si Solar Cell. "SolarTR-2", (2012).
  A.20 E. Ozkol, R. Turan, New Cluster PECVD System at GÜNAM. "SolarTR-2", (2012).
  A.21 S. H. Sedani, M. Karaman, K. Ertürk, R. Turan, The Electrical Properties of Effusion Cell Doped Silicon Thin Films; Towards a Low Cost Fabrication Method for Silicon Based Solar Cell Applications. "SolarTR-2", (2012).
  A.22 E. Özkol, G. Nogay, S. Kıncal, R. Turan, A Different a-Si Thin Film Sample Preparation Method for ESR Measurements. "SolarTR-2", (2012).
  A.23 M. Karaman, R. Turan, Fabrication and Doping of Thin Film Crystalline Si by Electron Beam Evaporation for Solar Cell Applications. "SolarTR-2", (2012).
  A.24 Es, F.; Demircioglu, O.; Kulakci, M.; Unalan, H.E.; Turan, R, Electroless Nickel Plating For Burried Contact Solar Cells. "SolarTR-2", (2012).
  A.25 A. Bek, İ. Tanyeli, H. Nasser, F. Es, R. Turan, Structural and optical properties of Ag nanoparticles formed by dewetting on various substrates. "SolarTR-2", (2012).
  A.26 M. Bilgen, F. Es, M. Günöven, R.Turan, Effect of AgNanoparticles Embedded in ZnO on the Performance of the n-type Solar Cells. "SolarTR-2", (2012).
  A.27 Z. Demircioğlu, E. Özkol, R. Turan, Optimization of Laser Scribing of PET for Thin Film Module Formation. "SolarTR-2", (2012).
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