Prof.Dr. NIZAMI HASANLI
FACULTY OF ARTS AND SCIENCES
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Education

  Master's, Baku State University, Physics
  Doctorate, Physico-Technical Institute, Leningrad, Physics

Publications (INTERNATIONAL)

Journal Papers

  A.1 N.M. Gasanly, M.I. Aliev, A.A. Kukharskii , V.K. Subashiev., Optical Properties of (InSb)x(InTe)1-x Solid Solutions. . "Sov. Phys. Semicond.", 4, (1970), p.479.
  A.2 N.M. Gasanly, M.I. Aliev, V.K. Subashiev., Optical Absorption Edge of In1-xGaxSb Solid Solutions. . "Sov. Phys. Semicond.", 5, (1971), p.1141.
  A.3 N.M. Gasanly, V.K. Subashiev, M.I. Aliev, A.A. Kukharskii, V.M. Evdokimov., Vibrational Spectra of InxGa1-xSb Solid Solutions. . "Sov. Phys. Solid State", 13, (1971), p.54.
  A.4 N.M. Gasanly, V.K. Subashiev., The Interaction of Plasmons and Optical Phonons in In0.5Ga0.5Sb . . " Sov. Phys. Solid State", 13, (1971), p.124.
  A.5 L.G. Musaeva, G.A. Akhundov, A.E. Bakhyshov,N.M. Gasanly., Lattice Reflection of Ga2S3 Crystals. . "Physica Status Solidi (b)", 60, (1973), p.K1.
  A.6 N.M. Gasanly, M.I. Aliev, V.K. Subashiev., Longitudinal Resonance Frequencies of Plasmon-Phonon Modes in Doped In0.5Ga0.5Sb Solid Solution. . "Izvestiya Akademii Nauk Azerbaijana, Fizika", 10, (1974), p.139.
  A.7 G.A. Akhundov, S.A. Musaev, A.E. Bakhyshov, N.M. Gasanly,L.G. Musaeva., Anisotropy of The Optical Constants of GaS and GaSe Near The Absorption Edge. . "Sov. Phys. Semicond.", 9, (1975), p.94.
  A.8 N.M. Gasanly, Z.D. Khalafov, M.D. Khomutova., Characteristics of The Structure of Ternary Compound TlGaS2 and Their Influence on Infrared Reflection Spectrum. . "Sov. Phys. Solid State", 19, (1977), p.514.
  A.9 B.N. Mavrin, Kh.E. Sterin, N.M. Gasanly, Z.D. Khalafov, E.Yu. Salaev,, Optical Phonons in Layer Crystals TlGaS2 , TlInS2 and TlGaSe2 . . "Sov. Phys. Solid State", 19, (1977), p.17.
  A.10 N.M. Gasanly, V.I. Tagirov, M.D. Khomutova., Atomic Chains and Characteristics of Lattice Vibrations in A2B3-Type Compounds with Tetrahedral Coordination of Atoms. vol. 20, No. 4, 83 (1977). . "Sov. Physics Journal", 20, (1977), p.83.
  A.11 Z.D. Khalafov, N.M. Gasanly, R.M. Sardarly., Optical Phonons in TlGaS2 . . "Sov. Physics Journal", 20, (1977), p.151.
  A.12 L.G. Musaeva, M.D. Khomutova, N.M. Gasanly., Vibrational Spectra of Ga2Se3 , Ga2S3 and Solid Solutions Based on Them. vol. 19, No. 6, 1030 (1977). . " Sov. Phys. Solid State", 19, (1977), p.1030.
  A.13 N.M. Gasanly, Z.D. Khalafov, M.D. Khomutova, R.M. Sardarly, V.I. Tagirov., Characteristics of The Infrared Reflection Spectra of TlBX2-Type Ternary Compounds. . "Sov. Physics Journal", 20, (1977), p.120.
  A.14 F.E. Faradzhev, N.M. Gasanly, B.N. Mavrin, N.N. Melnik., Raman Scattering in Some III-VI Layer Single Crystals. . "Physica Status Solidi (b)", 85, (1978), p.381.
  A.15 B.N. Mavrin, N.N. Melnik, Kh.E.Sterin, N.M. Gasanly, N.F. Gakhramanov, Raman Scattering Spectra and Interpacket Interaction in InS Crystal. . " Sov. Phys. Solid State", 20, (1978), p.459.
  A.16 V.I. Tagirov, N.M. Gasanly, B.M. Dzhavadov, M.A. Sobeikh, V.M. Salmanov., Photoluminescence of Layered Ga1-xInxSe Crystals at Two-Photon Optical Excitations. . "Physica Status Solidi (a)", 47, (1978), p.K157.
  A.17 N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov, E.A. Vinogradov., Infrared and Raman Spectra of Layer InSe Single Crystals. . "Physica Status Solidi (b)", 89, (1978), p.K43.
  A.18 N.M. Gasanly, B.N. Mavrin, Kh.E. Sterin, V.I. Tagirov, Z.D. Khalafov., Raman Studies of Layer TlGaS2 , TlInS2 and TlGaSe2 Crystals. vol. 86, No. 1, K49 (1978). . "Physica Status Solidi (b)", 86, (1978), p.K49.
  A.19 B.N. Mavrin, N.N. Melnik, Kh.E. Sterin, N.M. Gasanly, B.M. Dzhavadov., Raman Scattering Spectra of InSe Crystal. . "Sov. Phys. Solid State", 20, (1978), p.348.
  A.20 N.M. Gasanly, A.F. Goncharov, B.M. Dzhavadov, N.N. Melnik, V.I. Tagirov, Optical Phonons in TlInSe2 Single Crystals. . " Physica Status Solidi (b)", 92, (1979), p.K139.
  A.21 N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov, B.N. Mavrin., Lattice Vibrations Symmetry of TlInSe2 , TlInTe2 and TlGaTe2 Crystals. . "Sov. Physics Journal", 22, (1979), p.104.
  A.22 N.M. Gasanly, N.F. Gakhramanov, B.M. Dzhavadov, V.I. Tagirov, E.A. Vinogradov., Infrared Spectra of The Layer Compound InS . vol. 95, No. 1, K89 (1979). . "Physica Status Solidi (b)", 95, (1979), p.K 89.
  A.23 E.A. Vinogradov, N.M. Gasanly, A.F. Goncharov , B.M. Dzhavadov, Raman Scattering Spectra of Ga1-xInxSe Layer Solid Solutions. . "Sov. Phys. Solid State", 21, (1979), p.906.
  A.24 N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov, E.A. Vinogradov., Long-Wave Lattice Vibrations of TlInS2xSe2(1-x) and TlGaS2xSe2(1-x) Layer Solid Solutions. . "Physica Status Solidi (b)", 95, (1979), p.K 27.
  A.25 E.A. Vinogradov, N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov., Infrared Reflection Spectra of TlGaTe2 , TlInTe2 and TlInSe2 Single Crystals. . "Sov. Phys. Solid State", 21, (1979), p.1607.
  A.26 N.A. Bakhyshov, N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov , Sh.M. Efendiev., Mixed One- and Two-Mode Behaviour of Optical Phonons in TlGaS2xSe2(1-x) and TlInS2xSe2(1-x) Layer Solid Solutions. . "Physica Status Solidi (b)", 91, (1979), p.K1.
  A.27 N.M.Gasanly, A.F. Goncharov, B.M. Dzhavadov, N.N. Melnik, E.A.Vinogradov., Vibrational Spectra of TlGaTe2 , TlInTe2 and TlInSe2 Single Crystals. . "Physica Status Solidi (b)", 97, (1980), p.367.
  A.28 E.A. Vinogradov, N.M. Gasanly, N.F. Gakhramanov, B.M. Dzhavadov, V.I. Tagirov., Infrared Reflection Spectra of In6S7 Single Crystals. . "Sov. Phys. Solid State", 22, (1980), p.1661.
  A.29 N.M. Gasanly, R.E. Guseinov. A.S. Ragimov, V.I. Tagirov., Raman Spectra of TlGaxIn1-xS2 Layer Solid Solutions. vol. 101, No. 2, K121 (1980). . "Physica Status Solidi (b)", 101, (1980), p.K 121.
  A.30 N.M. Gasanly, B.M. Dzhavadov, V.I. Tagirov, E.A. Vinogradov., Vibrational Spectra of GaTe Crystal. . " Physica Status Solidi (b)", 100, (1980), p.K 53.
  A.31 E.A. Vinogradov, N.M. Gasanly, A.F. Goncharov, B.M. Dzhavadov, Structural Phase Transition in TlInS2xSe2(1-x) and TlGaxIn1-xSe2 Solid Solutions. . "Sov. Phys. Solid State", 22, (1980), p.526.
  A.32 N.M. Gasanly, A.S. Ragimov, V.I. Tagirov., Interpretation of Long-Wavelength Phonons in Layer TlGaS2-Type Compounds by Linear-Chain Model. . " Sov. Phys. Solid State", 23, (1981), p.793.
  A.33 N.M. Gasanly, B.M. Dzhavadov, A.S. Ragimov, V.I. Tagirov, R.E. Guseinov., Long-Wave Optical Phonons in In6S7 Layer Crystals. . "Physica Status Solidi (b)", 106, (1981), p.K 47.
  A.34 F.E. Faradzhev, N.M. Gasanly, A.S. Ragimov, A.F. Goncharov,S.I. Subbotin., Pressure Dependence of The Raman Spectra of Indium Sulphide. . "Solid State Commun.", 39, (1981), p.587.
  A.35 N.M. Gasanly, F.E. Faradzhev, V.M. Burlakov, A.F. Goncharov, E.A. Vinogradov., Davydov Splitting and Rigid-Layer Modes in InS Crystal. . "Solid State Commun.", 42, (1982), p.843.
  A.36 N.M. Gasanly, B.M. Dzhavadov, A.S. Ragimov, V.I. Tagirov, R.E. Guseinov., Infrared Reflectivity Spectra of TlGaS2-Type Layer Crystals. . "Physica B+C", 112, (1982), p.78.
  A.37 S.S. Kabalkina, V.G. Losev, N.M. Gasanly., Polymorphism of InS at High Pressures. . "Solid State Commun.", 44, (1982), p.1383.
  A.38 Sh.M. Efendiev, N.G. Darvishov, V.M. Nagiev, N.M. Gasanly., Raman Scattering in Pb(MoO4)x(WO4)1-x Mixed Crystals. . "Physica Status Solidi (b)", 110, (1982), p.K 21.
  A.39 E.A. Vinogradov, N.M. Gasanly, A.F. Goncharov, G.N. Zhizhin, N.N. Melnik,, Raman Scattering under Pressure and Ferroelastic Properties of Indium Sulphide Crystals. . "Sov. Phys. Solid State", 24, (1982), p.77.
  A.40 N.M. Gasanly, A.S. Ragimov, A.F. Goncharov, N.N. Melnik, Special Features of Vibrational Properties of Mixed Crystals with TlSe Structure. . "Physica B+C", 115, (1983), p.381.
  A.41 N.M. Gasanly, A.F. Goncharov, N.N. Melnik, A.S. Ragimov., Optical Phonons in GaS1-xSex Layer Mixed Crystals. . "Physica Status Solidi (b)", 120, (1983), p.137.
  A.42 N.M. Gasanly, A.S. Ragimov, V.I. Tagirov., Directional Dependence of Extraordinary Infrared Oscillator Parameters of TlGaS2-Type Layer Crystals. . "Physica B+C", 122, (1983), p.28.
  A.43 N.M. Gasanly, A.F. Goncharov, N.N. Melnik, A.S. Ragimov, V.I. Tagirov., Optical Phonons and Structure of TlGaS2 , TlGaSe2 and TlInS2 Layer Single Crystals. . " Physica Status Solidi (b)", 116, (1983), p.427.
  A.44 V.V. Sobolev, V.M. Kramar, N.M. Gasanly., Reflection Spectra of Indium Sulphide. . "Izvestiya Akademii Nauk Moldovy, Fizika", 10, (1984), p.59.
  A.45 N.M. Gasanly, V.M. Nagyev, N.N. Melnik., Effect of Substitution-Type Disorder in GaS1-xSex Layer Solid Solutions on Raman Spectra. . "Phys. Letters A", 103, (1984), p.394.
  A.46 N.M. Gasanly, N.N. Melnik, A.S. Ragimov, V.I. Tagirov., Vibrational Spectra of TlInSe2-TlTlSe2 Solid Solutions. . "Sov. Phys. Solid State", 26, (1984), p.336.
  A.47 N.M. Gasanly, N.N. Melnik., Influence of Substitutional Disorder in GaS1-xSex Solid Solutions on Their Raman Spectra. . "Sov. Phys. Solid State", 26, (1984), p.913.
  A.48 A.F. Goncharov, I.N. Makarenko, N.M. Gasanly., Effect of Pressure on The Optical Edge in InS Monocrystal. . "Physica Status Solidi (b)", 129, (1985), p.K 79.
  A.49 V.M. Burlakov, E.A. Vinogradov, Sh. Nurov, N.M. Gasanly, Ya.G. Ismailov., Parameters of The Bands in The Vibrational Spectrum of TlInS2 in The Range of Phase Transition Temperatures. . "Sov. Phys. Solid State", 27, (1985), p.2025.
  A.50 N.M. Gasanly, N.N. Melnik, V.I. Tagirov, A.A.Yushin., Special Features of First- and Second-Order Raman and Infrared Spectra of GaS1-xSex Mixed Crystals. . "Physica Status Solidi (b)", 135, (1986), p.K 107.
  A.51 Sh. Nurov, V.M. Burlakov, E.A. Vinogradov, N.M. Gasanly, B.M. Dzhavadov., Vibrational Spectra of TlInS2 , TlIn0.95Ga0.05S2 and TlIn(S0.8Se0.2)2 Crystals in The Vicinity of Phase Transitions. . "Physica Status Solidi (b)", 137, (1986), p.21.
  A.52 E.A.Vinogradov, N.M. Gasanly, L.G. Gasanova, A.Z. Magomedov, V.I. Tagirov., Infrared Reflectivity Spectra of Cu3In5S9 Layer Single Crystals. . "Physica Status Solidi (b)", 144, (1987), p.K 73.
  A.53 V.M. Burlakov, E.A. Vinogradov, N.M. Gasanly, N.N. Melnik, A.P. Ryabov., Raman Scattering of Light by a Soft Mode in The Compound TlInS2 . . "Sov. Phys. Solid State", 30, (1988), p.997.
  A.54 V.M. Burlakov, A.P. Ryabov, E.A. Vinogradov, N.N. Melnik, N.M. Gasanly., Raman Spectroscopy of Soft and Rigid Modes in Ferroelectric TlInS2 . . "Physica Status Solidi (b)", 153, (1989), p.727.
  A.55 N.M. Gasanly, B.A. Natig, A.E. Bakhyshev, K.G. Shirinov., Long-Wave Optical Phonons in InSbSe3 Layer Single Crystals. . "Physica Status Solidi (b)", 153, (1989), p.K 89.
  A.56 V.M. Burlakov, N.M. Gasanly, M.P. Yakheev., Raman Spectroscopy of The Ferroelectric Phase Transition in TlGa(Se1-xSx)2 Mixed Crystals: Inhomogeneously Broadened Soft Mode. . "Sov. Phys. Solid State", 32, (1990), p.29.
  A.57 N.M. Gasanly, I. Hympanova, V.I. Tagirov., The Influence of Hydrostatic Pressure on Raman Spectra of Layered Solid Solution GaS0.5Se0.5 . . "Acta Physica Univ. Comen.", 30, (1990), p.3.
  A.58 N.M. Gasanly, A.G. Guseinov, V.I. Tagirov, E.A. Aslanov, S.A. El-Hamid., Long-Wavelength Optical Phonons in Ag3B5C9 (B = Ga, In; C = S, Se, Te) Crystals. . "Crystal Research Technol.", 25, (1990), p.K 53.
  A.59 M. Gasanly, S.A. El-Hakim, L.G. Gasanova, A.Z. Magomedov., Lattice Vibrations in CuIn5S8 Crystals. . "Physica Status Solidi (b)", 158, (1990), p.K 1.
  A.60 N.M. Gasanly, A.G. Guseinov, E.A. Aslanov, S.A. El-Hamid., Infrared Reflection Spectra of Cu3B5C9 (B = Ga, In; C = S, Se, Te) Single Crystals. . "Physica Status Solidi (b)", 158, (1990), p.K 85.
  A.61 Sh.M. Gasanli, N.M. Gasanly, A.K. Streltsov., Influence of Anisotropic Etching on The Mechanical Strength of Single-Crystal Silicon Waves. . "Physica Status Solidi (a)", 127, (1991), p.127.
  A.62 N.M. Gasanly, S.A. El-Hamid, L.G. Gasanova, A.Z. Magomedov., Vibrational Spectra of Spinel-Type Compound CuIn5S8 . . "Physica Status Solidi (b)", 169, (1992), p.K 115.
  A.63 N.M. Gasanly, B.G. Akinoglu and R. Laiho., Brillouin Scattering in TlGa(S1-xSex)2 and TlIn1-xGaxS2 Layered Mixed Crystals. . "Japan. J. Appl. Phys.", 32, (1993), p.541-542.
  A.64 N.M. Gasanly, B.G. Akinoglu and S. Ellialtioglu., Elastic Properties of GaS1-xSex Layer Mixed Crystals by Brillouin Scattering . "Phys. Status Solidi (b)", 177, (1993), p.K59-K62.
  A.65 N.M. Gasanly, A.Z. Magomedov and N.N. Melnik., Raman and Infrared Studies of AgIn5S8 and CuIn5S8 Single Crystals. . "Phys. Status Solidi (b)", 177, (1993), p. K31-K35.
  A.66 N.M. Gasanly, B.G. Akinoglu, S. Ellialtioglu , R. Laiho., Elastic Coefficients in TlGa(S1-xSex)2 and TlIn1-xGaxS2 Layered Mixed Crystals by Brillouin Scattering. . "Physica B", 192, (1993), p.371-377.
  A.67 N.M. Gasanly, H. Ozkan and A. Culfaz., Composition Variations of Lattice Parameters of TlGa(S1-xSex)2 Layer Mixed Crystals. . "Phys. Status Solidi (a)", 140, (1993), p.1-4.
  A.68 A. Aydinli,R. Ellialtioglu,K. Allakhverdiev, S. Ellialtioglu, N.M. Gasanly, Low-Temperature Phase Transitions in TlGaS2 Layer Crystals. . " Solid State Commun.", 88, (1993), p.387-390.
  A.69 N.M. Gasanly, S.S. Babaev, Z. Ibragimov,B. Akinoglu., Pressure Dependence of The Raman Spectra of CdInAlS4 Layer Crystal. . "High Pressure Research", 13, (1994), p.115-120.
  A.70 N.M. Gasanly, A. Culfaz, H. Ozkan, S. Ellialtioglu., Lattice Parameters of TlGa1-xInxS2 and TlGa(S1-xSex)2 Layer Mixed Crystals. . "Cryst. Res. Technol.", 29, (1994), p.K51-K55.
  A.71 K.R. Allakhverdiev, N.M. Gasanly, A. Aydinli., Low-Temperature Photoluminescence Spectra of TlIn1-xGaxS2 Layer Mixed Crystals. . "Solid State Commun.", 94, (1995), p.777-782.
  A.72 N.M. Gasanly, H. Ozkan, A. Culfaz., Composition Variations of Lattice Parameters of TlIn(Se1-xTex)2, TlIn(Se1-xSx)2 and TlIn1-xGaxSe2 Mixed Crystals. . "Cryst. Res. Technol.", 30, (1995), p.109-113.
  A.73 N.M. Gasanly, H. Ozkan,A. Culfaz., Lattice Parameters of TlIn1-xGaxTe2 and TlTl(Se1-xSx)2 Mixed Crystals. . " Phys. Status Solidi (a)", 151, (1995), p.K23-K26.
  A.74 M.Parlak, C.Ercelebi,I. Gunal,H. Ozkan,N.M. Gasanly., Anisotropy of Electrical Resistivity and Hole Mobility in InTe Single Crystals. . "Cryst. Res. Technol.", 31, (1996), p.673-678.
  A.75 U. Schwarz, A. Goncharov, K. Syassen,N.M. Gasanly., Structural Phase Transformation of InS at High Pressures. . "High Pressure Science and Tecnology World Scientific Publ. Co.,", 1, (1996), p.427-429.
  A.76 H. Bocuk, B.A. Albiss, I. Ercan, H. Ozkan , N.M. Gasanly., Effect of Magnetic Field and Temperature on the Voltage-Current Characteristics of YBCO Superconductor. . "J. Low Temp. Phys.", 105, (1996), p.975-980.
  A.77 B.A. Albiss, H.Bocuk, N.M. Gasanly, H. Ozkan., Voltage-Current Characteristics of Polycrystalline (Bi,Pb)2Sr2Ca2Cu3O10 Superconductor at Different Magnetic Fields and Temperatures. . "J. Low Temp. Phys.", 105, (1996), p.957-962.
  A.78 B.A. Albiss, H. Ozkan, H. Bocuk, N.M. Gasanly., Effect of Gamma Irradiation on Structure and Electrical Properties of Bi,Pb)2Sr2Ca2Cu3O10 Superconductor. . "Superlattices and Microstructures", 21, (1997), p.23-26.
  A.79 N.M. Gasanly , A. Aydinli., Low-temperature Photoluminescence Spectra of InS Single Crystals. . "Solid State Commun.", 101, (1997), p.797-799.
  A.80 M. Parlak, C. Ercelebi, I. Gunal, H. Ozkan, N.M. Gasanly, A. Culfaz., Crystal Data, Electrical Resistivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals. . "Cryst. Res. Technol.", 32, (1997), p.395-400.
  A.81 Parlak, M., Ercelebi, C., Gunal, I., Ozkan, H. and Gasanly, N.M., Structural and Electrical Characterization of Ag3Ga5Te9 and Ag3In5Se9 Crystals. "Crystal Research and Technology", 33, (1998), p.923-928.
  A.82 Gasanly, N.M., Aydinli, A., Bek, A. and Yilmaz, I., Low-temperature Photoluminescence Spectra of Layered Semiconductor TlGaS2. " Solid State Communications", 105, (1998), p.21-24.
  A.83 Gasanly, N.M., Serpenguzel, A., Gurlu, O., Aydinli, A. and Yilmaz, I., Dependence of the Photoluminescence of Tl2InGaS4 Layered Crystal on Temperature and Excitation Intensity. "Solid State Communications", 108, (1998), p.525-530.
  A.84 Gasanly, N.M., Serpenguzel, A., Aydinli, A., Gurlu, O. and Yilmaz, I., Donor-acceptor Pair Recombination in AgIn5S8 Single Crystals.. "Journal of Applied Physics", 85, (1999), p.3198-3201.
  A.85 Gasanly, N.M., Ozkan, H., Aydinli, A. and Yilmaz, I., Temperature Dependence of the Raman-active Frequencies in Indium Sulfide.. "Solid State Communications", 110, (1999), p.231-236.
  A.86 Ozkan, H., Topal, U., Gasanly, N., Albiss, B. and Kayed T., Voltage-current Characteristics of the Thallium Based Ceramic Superconductors.. "Superconductor Science and Technology", 12, (1999), p.592-596.
  A.87 Aydinli, A., Gasanly, N.M., Yilmaz, I. and Serpenguzel, A., Radiative Donor-acceptor Pair Recombination in TlInS2 Single Crystals.. "Semiconductor Science and Technology", 14, (1999), p.599-603.
  A.88 Gasanly, N.M., Ozkan, H. and Tas, M., Composition Dependence of Lattice Anisotropy of TlBX2-type Chain Mixed Crystals. . "Crystal Research and Technology", 35, (2000), p.185-188.
  A.89 Ozkan, H., Gasanly, N. and Kayed, T., Effect of Magnetic Field and Gamma Irradiation on the Electrical Properties and Structure of the Tl-Based Ceramic Superconductors. . "Superconductor Science and Technology", 13, (2000), p.161-164.
  A.90 Gasanly, N.M., Serpenguzel, A., Aydinli, A. and Baten, S.M.A., Low Temperature Visible Photoluminescence Spectra of TlGaSe2 Layered Crystal. "Journal of Luminescence", 86, (2000), p.39-43.
  A.91 Gasanly, N.M., Aydinli, A., Ozkan, H. and Kocabas, C., Temperature Dependence of the First-order Raman Scattering in GaS Layered Crystals. . "Solid State Communications", 116, (2000), p.147-151.
  A.92 Kayed, T., Ozkan, H., Gasanly, N.M. and Ercan, I., Critical Currents of Bi-223 Tapes Near Tc under Magnetic Field and Gamma Irradiation.. "Superconductor Science and Technology", 13, (2000), p.1625-1628.
  A.93 Aydinli, A., Gasanly, N.M. and Goksen, K., Donor-acceptor Pair Recombination in Gallium Sulfide. "Journal of Applied Physics", 88, (2000), p.7144-7149.
  A.94 Qasrawi, A.F. and Gasanly, N.M., Crystal Data, Photoconductivity and Carrier Mechanisms in CuIn5S8 Single Crystals . "Crystal Research and Technolology", 36, (2001), p.1399-1410.
  A.95 Aydinli, A., Gasanly, N.M. and Goksen,K., Low-temperature Photoluminescence Study of GaS0.5Se0.5 Layered Crystals. "Materials Research Bulletin", 36, (2001), p.1823-1832.
  A.96 Aydinli, A., Gasanly, N.M. and Goksen,K., Defect Luminescence in Undoped p-GaSe. "Philosophical Magazine Letters", 81, (2001), p.859-867.
  A.97 Gasanly, N.M., Aydinli, A. and Salihoglu, O., Thermally Stimulated Current Observation of Trapping Centers in Undoped GaSe Layered Single Crystals. . "Crystal Research and Technolology", 36, (2001), p.295-301.
  A.98 Qasrawi, A.F. and Gasanly, N.M., Crystal Data, Electrical Resistivity, and Hall Mobility of n-type AgIn5S8 Single Crystals . "Crystal Research and Technology", 36, (2001), p.457-464.
  A.99 Kayed, T.S., Ozkan, H. and Gasanly, N.M., Effect of Lithium Doping on the Properties of Tl-based Superconductors. "Superconductor Science and Technology", 14, (2001), p.738-740.
  A.100 Panich, A.M. and Gasanly, N.M., Indirect Nuclear Exchange Coupling and Electronic Structure of Chain Semiconductor TlSe: 203Tl and 205Tl NMR Study. . "Physical Review B", 63, (2001), p.5201-5211.
  A.101 Gasanly, N.M., Aydinli, A. and Ozkan, H., Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe. "Crystal Research and Technology", 36, (2001), p.1393-1398.
  A.102 Aydinli, A., Gasanly, N.M., Uka, A. and Efeoglu, H., Anharmonicity in GaTe Layered Crystals. "Crystal Research and Technolology", 37, (2002), p.1303-1309.
  A.103 Gasanly, N.M. and Aydinli, A., Low-temperature Raman Scattering Spectra of GaSexS1-x Layered Mixed Crystal. "Crystal Research and Technolology", 37, (2002), p.1011-1017.
  A.104 Qasrawi, A.F. and Gasanly, N.M., Carrier Transport Properties of InS Single Crystals. "Crystal Research and Technolology", 37, (2002), p.1104-1112.
  A.105 Aydinli, A. and Gasanly, N.M., Invited Paper: Defect Luminescence in Some Layered Binary Chalcogenide Semiconductots. "Defect and Diffusion Forum", 210-212, (2002), p.61-69.
  A.106 Gasanly,N.M., Aydinli,A., Kocabas, C. and Ozkan.H., Anharmonicity of Zone-center Optical Phonons: Raman Scattering Spectra of GaS0.5Se0.5 Layered Crystal. . "Physica Scripta", 65, (2002), p.534-538.
  A.107 Gasanly, N.M.,Goksen, K. and Ozkan, H., Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals . "Crystal Reserach and Technology", 37, (2002), p.581-586.
  A.108 Gasanly, N.M. and Pala,R., Anharmonic Line Shift and Linewidth of the Raman Modes in GaS0.75Se0.25 Layered Crystals . "Physica Status Solidi (b)", 234, (2002), p.665-673.
  A.109 Gasanly, N.M., Aydinli, A., Ozkan, H. and Kocabas, C., Temperature-dependent Raman Scattering Spectra of -GaSe Layered Crystal. "Materials Research Bulletin", 37, (2002), p.169-176.
  A.110 Qasrawi, A.F. and Gasanly, N.M., Investigation of Localized Levels in GaS0.5Se0.5 Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements . "Physica Status Solidi (a)", 194, (2002), p.81-88.
  A.111 Gasanly, N.M., Temperature Dependence of the First-order Raman Phonon Lines in GaS0.25Se075 Layered Crystals . "Acta Physica Polonica A", 102, (2002), p.801-810.
  A.112 Qasrawi, A.F. and Gasanly, N.M., Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals. "Crystal Research and Technolology", 37, (2002), p.587-594.
  A.113 Qasrawi, A.F. and Gasanly, N.M., Photoelectronic and Electrical Properties of InS Crystals. "Semiconductor Science and Technology", 17, (2002), p.1288-1292.
  A.114 Gasanly, N.M., Aydinli, A. and Yuksek, N.S., Temperature- and Excitation Intensity-dependent Photoluminescence in TlInSeS Single Crystals . "J. Phys.: Condensed Matter", 14, (2002), p.13685-13692.
  A.115 Cavdar, S., Aksu, E., Koralay, H., Ozkan, H., Gasanly, N.M. and Ercan, I., Effect of B2O3 Addition on the Formation and Properties of Tl-2212 and Tl-2223 Superconductors . "Physica Status Solidi (a)", 199, (2003), p.272-276.
  A.116 Ogun, S.E., Ozkan, H. and Gasanly, N.M., Effect of LiCO3 Doping on the Properties of Bi-based Superconductors . "IEEE Transactions on Applied Superconductivity", 13, (2003), p.3158-3160.
  A.117 Yuksek, N.S., Gasanly, N.M. and Ozkan, H., TSC Analysis of Shallow Levels in TlGaS2 Layered Single Crystals . "Semiconductor Science and Technology", 18, (2003), p.834-838.
  A.118 Gasanly, N.M., Aydinli, A., and Yuksek, N.S., Thermally Stimulated Currents in n-InS Single Crystals. "Materials Research Bulletin", 38, (2003), p.699-704.
  A.119 Gasanly, N.M., Aydinli, A., Yuksek, N.S. and Salihoglu, O., Trapping Centers in Undoped GaS Layered Single Crystals . "Applied Physics A - Materials Science and Processing", 77, (2003), p.603-606.
  A.120 Ozdemir,S., Gasanly, N.M., and Bucurgat, M., Trap Levels in Layered Semiconductor TlInS1.9Se0.1 . "Physica Status Solidi (a)", 196, (2003), p.422-428.
  A.121 Qasrawi, A.F. and Gasanly, N.M., Photoelectronic, Optical, and Electrical Properties of TlInS2 Single Crystals . "Physica Status Solidi (a)", 199, (2003), p.277-283.
  A.122 Gasanly, N.M., Effect of Crystal Disorder on Line Width Broadening of Phonon Modes in GaS1-x Sex Layered Mixed Crystals . "Crystal Research and Technolology", 38, (2003), p.962-967.
  A.123 Qasrawi, A.F. and Gasanly, N.M., Photoelectronic and Electrical Properties of CuIn5S8 Single Crystals . "Crystal Research and Technolology", 38, (2003), p.1063-1070.
  A.124 Qasrawi, A.F. and Gasanly, N.M., Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals. . "Material Research Bulletin", 39, (2004), p.1353-1359.
  A.125 Yuksek, N.S., Gasanly, N.M., Aydinli, A., Ozkan, H. and Acikgoz, M., Infrared photoluminescence from TlGaS2 layered single crystals . "Crystal Research Tecnology", 39, (2004), p.800-806.
  A.126 Yuksek, N.S., Kavas, H., Gasanly, N.M. and Ozkan, H., Trapping center parameters of TlGaSe2 layered crystals. "Physica B", 344, (2004), p.249-254.
  A.127 Yuksek, N.S., Gasanly, N.M., Ozkan, H. and Aydinli, A., Temperature Dependence of Raman-active Modes of TlGaS2 Layered Crystals: an Anharmonicity Study. . "J. Korean Phys. Soc.", 45, (2004), p.501-506.
  A.128 Yuksek, N.S, Gasanly, N.M. and Aydinli,A., Anharmonic Line Shift and Linewidth of the Raman Modes in TlInS2 Layered Crystals. . "J. Raman Spectroscopy", 35, (2004), p.55-60.
  A.129 Qasrawi, A.F. and Gasanly, N.M., Hall effect, space-charged limited current and photoconductivity measurements on TlGaSe2 layere crystals . "Semiconductor Science and Technology", 19, (2004), p.505-509.
  A.130 Qasrawi, A.F. and Gasanly, N.M., Investigation of carrier scattering mechanisms in TlInS2 single crystals by Hall effect measurements . "Crystal Research and Technology", 39, (2004), p.439-447.
  A.131 Aytekin, S., Yuksek, N.S., Gasanly, N.M., Goktepe, M. and Aydinli, A., Thermally stimulated currents in layered Ga4SeS3 semiconductor. "Physica Status Solidi (a)", 201, (2004), p.2980-2985.
  A.132 Panich, A.M., Ailion, D.C., Kashida, S. and Gasanly, N.M., Gallium and Thallium NMR Study of Phase Transitions and Incommensurability in the Layered Semiconductor TlGaSe2. . "Physical Review B", 69, (2004), p.245319-7.
  A.133 Yuksek, N.S., Gasanly, N.M., Ozkan, H. and Karci, O., Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements . "Acta Physica Polonica A", 106, (2004), p.95-103.
  A.134 Aydinli, A.,Gasanly, N.M., Aytekin, S., Trap Levels in Layered Semiconductor Ga2SeS. "Solid State Communications", 132, (2004), p.857-861.
  A.135 Yuksek, N.S. and Gasanly, N.M, Temperature Dependence of Raman-active Mode Frequencies and Linewidths in TlGaSe2 Layered Crystals. . "Crystal Research and Tecnology", 40, (2005), p.264-270.
  A.136 Gasanly, N.M. and Yuksek, N.S., Low Temperature Raman Scattering in TlGaxIn1-xS2 Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Lineshapes . "Acta Physica Polonica A", 108, (2005), p.997-1003.
  A.137 Qasrawi, A.F. and Gasanly, N.M., Optoelectronic and electrical properties of TlGaS2 single crystal. "Physica Status Solidi (a)", 105, (2005), p.2051-2057.
  A.138 Karabulut, O., Yilmaz, K., Parlak, M. and Gasanly, N.M., Electrical and Photoconductive properties of GaS0.75Se0.25 Mixed Crystal.. "Crystal Research and Technology", 40, (2005), p.253-258.
  A.139 Gasanly, N.M., Compositional dependence of the Raman line shapes in GaSxSe1-x layered mixed crystals. . "J. Raman Spectroscopy", 36, (2005), p.879-883.
  A.140 Qasrawi, A.F. and Gasanly, N.M., Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals. . "Semiconductor Science and Technology", 20, (2005), p.446-452.
  A.141 Goksen, K., Gasanly, N.M., Aydinli, A. and Ozkan, H.., Donor-acceptor Pair Recombination in Tl2InGaS4 Layered Crystals.. "J. Korean Physical Society", 47, (2005), p.267-271.
  A.142 Ogun,S.E., Goktas, H., Ozkan, H., and Gasanly,N.M., Effect of Low-energy Electron Irradiation on (Bi, Pb)-2212 Superconductors.. "Coating and Surface Technology", 196, (2005), p.118-122.
  A.143 N. M. Gasanly, N. A. P. Mogaddam and H. Ozkan., Thermally Stimulated Current Observation of Trapping Centers in Undoped Tl4Ga3InSe8 Layered Single Crystals. . "Crystal Research and Technology", 41, (2006), p.1100-1105.
  A.144 A. F. Qasrawi , N. M. Gasanly., Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals. . "Crystal Research and Technology", 41, (2006), p.174-179.
  A.145 K. Goksen, N. M. Gasanly, A. Seyhan and R. Turan., Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals. . "Materials Science and Engineering B", 127, (2006), p.41-46.
  A.146 A. F. Qasrawi and N. M. Gasanly., Optical properties of TlInS2 layered single crystals near the absorption edge . "Journal of Materials Science", 41, (2006), p.3569-3572.
  A.147 N.M. Gasanly, H. Ozkan and N.A.P. Mogaddam,, Thermally stimulated currents in layered semiconductor Tl4In3GaS8. "Semicond. Sci. Technol.", 21, (2006), p.1250-1255.
  A.148 N.M. Gasanly, Influence of Isomorphic Atom Substitution on Lattice Anisotropy of Thallium Dichalcogenide Layered Mixed Crystals. . "Acta Physica Polonica A", 110, (2006), p.471-477.
  A.149 N.M. Gasanly, K. Goksen, Visible photoluminescence from chain Tl4In3GaSe8 semiconductor. "J. Physics: Condensed Matter", 18, (2006), p.6057-6064.
  A.150 A. F. Qasrawi , N. M. Gasanly., Acoustic phonons scattering mobility and carrier effective mass in In6S7 crystals. "J. Alloys and Compounds", 426, (2006), p.64-66.
  A.151 A. F. Qasrawi , N. M. Gasanly., Light illumination effect on the electrical and photovoltaic properties of In6S7 crystals . "J. Physics: Condensed Matter", 18, (2006), p.4609-4614.
  A.152 N.M. Gasanly, Effect of Isomorphic Atom Substitution on Lattice Parameters and Optical Absorption Edge of TlGaSe2-TlInSe2 Mixed Crystals. . "J. Korean Physical Society", 48, (2006), p.914-918.
  A.153 N.A.P. Mogaddam, N.S. Yuksek, N.M. Gasanly, H. Ozkan., Determination of Trapping Center Parameters of Tl2InGaS4 Layered Crystals by Thermally Stimulated Current Measurements. . "Journal Alloys and Compounds", 417, (2006), p.23-28.
  A.154 K. Goksen, N. M. Gasanly and R. Turan., Excitation intensity- and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals . "Crystal Research and Technology", 41, (2006), p.822-828.
  A.155 I. Guler, K. Goksen and N.M. Gasanly, Excitation and temperature tuned photoluminescence in Tl2In2S3Se layered semiconductor. "Acta Physica Polonica A", 110, (2006), p.823-831.
  A.156 K. Goksen, N.M. Gasanly, Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals. "Journal of Physics: Condensed Matter", 19, (2007), p.456221.
  A.157 A. F. Qasrawi and N. M. Gasanly., Study of trapping and recombination centers in Tl2InGaTe4 chain crystals by dark- and photo-conductivity measurements . "Philosophical Magazine", 87, (2007), p.5741-5747.
  A.158 I. Guler and N. M. Gasanly., Optical properties of TGaSSe layered single crystals. "J. Korean Phys. Soc.", 51, (2007), p.2031-2035.
  A.159 Qasrawi A.F., Gasanly N.M., Thermal lattice scattering mobility and carrier effective mass in the intrinsic Tl2InGaTe4 single crystals . "Journal of Physics: Condensed Matter", 19, (2007), p.156206.
  A.160 A. F. Qasrawi and N. M. Gasanly, Dispersive optical constants of Tl2InGaSe4 single crystals. "Physica Scripta", 73, (2007), p.249-252.
  A.161 Qasrawi, A.F. and Gasanly, N.M., Optical properties of Tl2InGaS4 layered single crystals. "Optical Materials", 29, (2007), p.1763-1767.
  A.162 N. M. Gasanly, I. Guler, and K. Goksen., Crystal data, absorption edge and refractive index dispersion in Tl2In2S3Se layered single crystals . "Crystal Research and Technology", 42, (2007), p.621-625.
  A.163 Qasrawi, A.F. and Gasanly, N.M., Photoelectronic and electrical properties of Tl2InGaS4 layered crystals.. "Solid State Communication", 141, (2007), p.117-121.
  A.164 A.F. Qasrawi and N.M. Gasanly, Energy band gap and oscillator parameters of Ga4Se3S single crystals. "Solid State Communications", 142, (2007), p.566-568.
  A.165 K. Goksen and N. M. Gasanly., Optical constants of Tl4Ga3InSe8 layered single crystals. "Physica B", 400, (2007), p.266-272.
  A.166 K. Goksen, N. M. Gasanly and H. Ozkan, Optical absorption and reflection studies of Tl4InGa3S8 layered single crystals. "Acta Physica Pololonica A", 112, (2007), p.93-100.
  A.167 A.F. Qasrawi and N.M. Gasanly, Crystal data and some physical properties of Tl2InGaTe4 single crystals. "Crystal Research and Technology", 42, (2007), p.807-811.
  A.168 A.F. Qasrawi and N.M. Gasankly, Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals . "Physica Status Solidi (a)", 244, (2007), p.3165-3169.
  A.169 K. Goksen, N.M. Gasanly and H. Ozkan, Dispersive optical constants and temperature tuned band gap energy of Tl2InGaS4 layered crystals . "J. Phys.: Cond. Matter", 19, (2007), p.256210.
  A.170 I. Guler, K. Goksen, N. M. Gasanly and R. Turan, Low-temperature visible photoluminescence and optical absorption in Tl2In2Se3S semiconductor. . "Physica B", 395, (2007), p.116-120.
  A.171 N.M. Gasanly, Trapping Center Parameters and Optical Absorption in Quaternary Tl4In3GaS8, Tl4InGa3Se8 and Tl2InGaS4 Semiconductors . "J. Korean Phys. Soc.", 50, (2007), p.1104-1108.
  A.172 K. Goksen and N. M. Gasanly, Refractive index, oscillator parameters and temperature tuned energy band gap of Tl4In3GaS8 layered single crystals. . "Journal of Physics and Chemistry of Solids", 69, (2008), p.2385-2389.
  A.173 A. F. Qasrawi and N. M. Gasanly., Determination of carrier effective mass, impurity energy levels and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements . "Physica Status Solidi (a)", 205, (2008), p.1662-1665.
  A.174 A.F. Qasrawi, N.M. Gasanly, Electron-lattice interactions scattering mobility in Tl2InGaSe4 single crystals . "Journal of Physics: Condensed matter", 20, (2008), p.155204.
  A.175 K. Goksen and N. M. Gasanly, Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals . "Crystal Research and Technology", 43, (2008), p.514-521.
  A.176 A. F. Qasrawi and N. M. Gasanly, Space charge limited currents and photoconductive properties of Tl2InGaSe4 layered crystals . "Philosophical Magazine", 88, (2008), p.2899-2906.
  A.177 N. M. Gasanly and I. Guler, Temperature-tuned band gap energy and oscillator parameters of TlInSeS layered single crystals. . "International Journal of Modern Physics B", 22, (2008), p.3931-3939.
  A.178 A. F. Qasrawi, N. M. Gasanly and K. F. Ilaiwi, Optoelectronic properties of Ga4Se3S layered single crystals. "Physica Scripta", 78, (2008), p.015701.
  A.179 A. F. Qasrawi and N. M. Gasanly, Hopping conduction in Ga4Se3S layered single crystals. "Solid State Communications", 148, (2008), p.190-193.
  A.180 A. F. Qasrawi and N. M. Gasanly., Crystal data and indirect optical transitions in Tl2InGaSe4 single crystals. "Materials Research Bulletin", 43, (2008), p.1497-1501.
  A.181 M. Isik, K. Goksen, N. M. Gasanly and H. Ozkan, Traps Distribution in TlInS2 Layered Crystals from Thermally Stimulated Current Measurements . "Jornal of Korean Physical Society", 52, (2008), p.367-373.
  A.182 A.F.Qasrawi, N.M. Gasanly, Dark electrical conductivity and photoconductivity of Ga4Se3S layered single crystals. "Journal of Physics and Chemistry of Solids", 69, (2008), p.2719-2733.
  A.183 T. Yildirim and N. M. Gasanly., Shallow trapping center parameters in as-grown AgIn5S8 crystals by thermally stimulated current measurements . "Crystal Research and Technology", 44, (2009), p.1267-1271.
  A.184 T. Yildirim and N. M. Gasanly, Thermally stimulated current observation of trapping centers and their distributions in as-grown TlGaSeS layered single crystals . "Materials Chemistry and Physics", 118, (2009), p.32-36.
  A.185 T. Yildirim and N. M. Gasanly., Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals . "Solid State Sciences", 11, (2009), p.1562-1566.
  A.186 I. Guler, N. M. Gasanly, Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements . "Physica B: Condensed Matter", 123, (2009), p.2034-2038.
  A.187 N. M. Gasanly, Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 layered single crystals . "Crystal Research and Technology", 44, (2009), p.322-326.
  A.188 M. Isik and N. M. Gasanly., Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals . "J. Phys. Chem. Solids", 70, (2009), p.1048-1053.
  A.189 I. Guler and N. M. Gasanly., Trapping Center Parameters in TlInSSe Layered Single Crystals by Thermally Stimulated Currents Measurements . "Journal of Alloys and Compounds", 485, (2009), p.41-45.
  A.190 A. F. Qasrawi, N. M. Gasanly, Hole-polar phonon interactions scattering mobility in TlSe0.75S0.25 single crystals. "Physica Status Solidi (a)", 206, (2009), p.1565-1568.
  A.191 A. F. Qasrawi, N. M. Gasanly., Temperature- and photo-excitation effects on the electrical properties of Tl4Se3S crystals. . "J. Phys.: Cond. Matter", 21, (2009), p.115801.
  A.192 M. Isik, N. M. Gasanly, H. Ozkan, Deep Traps Distribution in TlInS2 Layered Crystals.. "Acta Phys. Polonica A", 115, (2009), p.732-737.
  A.193 A. F. Qasrawi and N. M. Gasanly., Transport and recombination kinetics in TlGaTe2 crystals. "Physica Status Solidi (a)", 206, (2009), p.2555-2558.
  A.194 A.F. Qasrawi, N.M. Gasanly, Hall effect analysis in TlGaTe2 single crystals.. "J. Phys.: Cond. Matter", 21, (2009), p.235802.
  A.195 T. Yildirim, N. M. Gasanly., Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals. . "Current Applied Physics", 9, (2009), p.1278-1282.
  A.196 A. F. Qasrawi and N. M. Gasanly., Structural, electrical and anisotropic properties of Tl4Se3S chain crystals. "Materials Research Bulletin", 44, (2009), p.2009-2013.
  A.197 K. Goksen, N. M. Gasanly, Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements. . "Philosiphical Magazine", 89, (2009), p.435-447.
  A.198 A. F. Qasrawi and N. M. Gasanly., Optoelectronic properties of Tl3InSe4 single crystals.. "Philosophicai Magazine", 90, (2010), p.3845-3854.
  A.199 I. Guler and N. M. Gasanly., Optical Properties of Tl2In2Se3S Layered Single Crystals.. "Philosophical Magazine", 90, (2010), p.1799-1806.
  A.200 I. Guler and N. M. Gasanly., Trapping centers and their distribution in Tl2In2Se3S layered single crystals. "Solid State Communications", 150, (2010), p.176-180.
  A.201 N. M. Gasanly., Composition-tuned refractive index and oscillator parameters in TlGaxIn1xS2 layered mixed crystals (0  x  1). . "Solid State Communications", 150, (2010), p.1656-1659.
  A.202 A. F. Qasrawi and N. M. Gasanly., Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes . "Current Applied Physics", 10, (2010), p.592-596.
  A.203 N. M. Gasanly., Optical properties of TlGaxIn1xS2 layered mixed crystals (0  x  1) I. Composition- and temperature-tuned energy band gap . "J. Alloys Compd.", 498, (2010), p.148-151.
  A.204 N. M. Gasanly, Effect of temperature and isomorphic atom substitution on the optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25  x  1). . "Cryst. Res. Technol.,", 45, (2010), p.525-528.
  A.205 A. F. Qasrawi and N. M. Gasanly., Anisotropic electrical and dispersive optical parameters in InS layered crystals. "Solid State Communications", 150, (2010), p.325-328.
  A.206 T. Yildirim, H. A. Nasser and N. M. Gasanly., Determination of trapping center parameters of Tl2Ga2S3Se layered crystals by thermally stimulated current measurements . "Int. J. Mod. Phys. B", 24, (2010), p.2149-2161.
  A.207 A. F. Qasrawi and N. M. Gasanly., Influence of photonic excitations on the electrical parameters of TlInS2 crystals.. "Cryst. Res. Technol.", 45, (2010), p.433-438.
  A.208 Ilker Kucuk, Tacettin Yildirim, Nizami M. Gasanly and Husnu Ozkan, Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals . "J. Alloys Compounds", 507, (2010), p.517-520.
  A.209 K. Goksen, N. Gasanly and H. Ozkan, TUNING OPTICAL ABSORPTION EDGE BY COMPOSITION AND TEMPERATURE IN TlGaxIn1-xS2 LAYERED MIXED CRYSTALS (0  x  1) . "Azerbaijan Journal of Physics", 16, (2010), p.143-146.
  A.210 N.M. Gasanly, Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) layered mixed crystals (0.25  x  1). . "Cryst. Res. Technology", 46, (2010), p.1141-1144.
  A.211 N.M. Gasanly, Coexistence of indirect and direct optical transitions, refractive index, and oscillator parameters in TlGaS2 , TlGaSe2 , and TlInS2 layered single crystals. . "J. Korean Phys. Society", 57, (2010), p.164-168.
  A.212 Ahmet Karatay, Çağla Aksoy, H. Gul Yaglioglu, Ayhan Elmali, Ulaş Kürüm,, The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films . "Journal of Optics", 13, (2011), p.75203.
  A.213 N.M. Gasanly, Temperature- and excitation-dependent photoluminescence in TlGaSeS Layered Crystals. "Journal of Alloys and Compounds", 509, (2011), p.4205-4209.
  A.214 A. F. Qasrawi and N. M. Gasanly, Characterization of Ag/TlInSe2/Ag structure. "Phys. Status Sol. (a)", 208, (2011), p.1688-1692.
  A.215 M. Isik and N. M. Gasanly., Thermally stimulated current measurements in undoped Ga3InSe4 single crystals. "J. Phys. Chem. Sol.", 72, (2011), p.768-772.
  A.216 I. Guler and N. M. Gasanly., Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25  x  1): Compositional dependence of the mode frequencies and line widths . "Physica B: Condensed Matter", 406, (2011), p.3374-3376.
  A.217 M. Isik and N. M. Gasanly, Trapping center parameters in In6S7 crystals. "Physica B: Condensed Matter", 406, (2011), p.2740-2744.
  A.218 A. F. Qasrawi and N. M. Gasanly, Growth and characterization of Tl3InSe4 single crystals. "Mat. Sci. Semicond. Process.", 14, (2011), p.175-178.
  A.219 Ilker Kucuk, Tacettin Yıldırım, Nizami M. Gasanly, Husnu Ozkan., Estimation of thermally stimulated current in as grown TlGaSeS layered single crystals by multilayered perceptron neural network. . "Expert Systems with Applications", 38, (2011), p.7192-7194.
  A.220 N. M. Gasanly and T. Yildirim, Thermally Stimulated Currents Study of Shallow Traps in As-grown TlInSe2 Chain Crystals. . "Acta Physica Polonica A", 119, (2011), p.279-283.
  A.221 N.M. Gasanly, Refractive index and oscillator parameters in TlGaS2 , TlGaSe2 and TlInS2 layered crystals. . "J. Optoelectronics and Advanced Materials", 13, (2011), p.49-52.
  A.222 A. F. Qasrawi, Faten G. Aljammal, Nisreen M. Taleb and N. M. Gasanly, Design and characterization of TlInSe2 varactor diodes. "Physica B: Condensed Matter", 406, (2011), p.2740-2744.
  A.223 A. F. Qasrawi and N. M. Gasanly, Transient and steady state photoelectronic analysis in TlInSe2 crystals. "Materials Research Bulletin", 46, (2011), p.1227-1230.
  A.224 M. Isik , E. Bulur, N.M. Gasanly, Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals. . "Journal of Alloys and Compounds, vol. 545, No. 1, (2012).", 545, (2012), p.153-156.
  A.225 A. F. Qasrawi, Tasneem R. Yaseen, Bothaynah Eghbariy and N. M. Gasanly, Photovoltaic effect and space charge limited current analysis in TlGaTe2 crystals. "Acta Physica Polonica A", 121, (2012), p.152-155.
  A.226 M. Isik, N.M. Gasanly, Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0  x  1). . "Optics Communications", 285, (2012), p.4092-4096.
  A.227 A. F. Qasrawi , Shadia M. S. Elayyat, and N. M. Gasanly, Dynamical and passive characteristics of the Ag/TlGaSeS/Ag RF resonators. "Crystal Research and Technology", 47, (2012), p.615-619.
  A.228 A.F.Qasrawi, N.M. Gasanly, Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals . "Physica B: Condensed Matter", 407, (2012), p.2753-2756.
  A.229 M. Isik , S.S. Cetin , N.M. Gasanly, S. Ozcelik., Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements.. "Solid State Communications", 152, (2012), p.791-793.
  A.230 N. M. Gasanly., Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals . "Physica B: Physics of Condensed Matter, vol. 407, No. 21, (2012).", 407, (2012), p.4318-4322.
  A.231 M. Isik and N. M. Gasanly, Determination of optical parameters of Ga0.75In0.25Se layered crystals.. "Crystal Research and Technology", 47, (2012), p.530-534.
  A.232 N. M. Gasanly, Compositional dependence of refractive index and oscillator parameters in TlGaS2xSe2(1-x) layered mixed crystals (0  x  1). . "Mater. Chem. Phys.", 136, (2012), p.259-263.
  A.233 M. Isik , N.M. Gasanly, Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements. . "Physica B: Condensed Matter", 407, (2012), p.2229-2233.
  A.234 N.M. Gasanly, Absorption edge and optical constants of layered structured Tl2Ga2Se3S single crystals. . "Physica Scripta", 85, (2012), p.065701.
  A.235 M. Isik , N.M. Gasanly, R. Turan., Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2 , TlGaS2 and TlInS2 single crystals. . "Physica B: Physics of Condensed Matter", 407, (2012), p.4193-4197.
  A.236 A. F. Qasrawi and N. M. Gasanly, Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts. "Materials Science and Engineering: B", 177, (2012), p.981-985.
  A.237 M. Isik , N. M. Gasanly, Dielectric functions and interband critical points of anisotropic chain structured TlSe single crystals . "J. Appl. Phys.", 112, (2012), p.083526.
  A.238 N. M. Gasanly., Tuning optical absorption edge by composition and temperature in TlGaS2xSe2(1-x)layered mixed crystals (0  x  1) . "Acta Phys. Polonica A, vol. 122, No. 4, (2012).", 122, (2012), p.728-731.
  A.239 N.M. Gasanly, Radiative donor-acceptor pair recombination in Tl2Ga2Se3S layered single crystals. "Acta Physica Polonica A", 124, (2013), p.128-132.
  A.240 S. Delice, M. Isik , E. Bulur, N.M. Gasanly, Thermoluminescence properties of Tl2Ga2S3Se layered single crystals. "Journal of Applied Physics", 113, (2013), p.193510.
  A.241 M. Isik, N.M. Gasanly, Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals . "Physica B: Condensed Matter", 421, (2013), p.53-56.
  A.242 M. Isik, E. Bulur, N.M. Gasanly, TL and TSC studies on TlGaSe2 layered single crystals. "Journal of Luminescence", 144, (2013), p.163-168.
  A.243 M. Isik, N.M. Gasanly, Interband critical points in TlGaxIn1-xS2 mixed crystals (0  x  1). "Journal of Alloys and Compounds", 481, (2013), p.542-546.
  A.244 I. Guler, M. Ambrico, T. Ligonzo, N. M. Gasanly, Temperature-Dependent Absorption Edge and Photoconductivity of Tl2In2S3Se Layered Single Crystals. "J. Alloys and Compounds", 550, (2013), p.471-474.
  A.245 N.M. Gasanly, Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals. "J. Alloys and Compounds", 547, (2013), p.33-36.
  A.246 A. F. Qasrawi and N. M. Gasanly, Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals. . "Materials Chemistry and Physics", 141, (2013), p.63-68.
  A.247 M. Isik , I. Guler N.M. Gasanly, Dependence of the photoluminescence of Ga0.75In0.25Se layered crystals on temperature and excitation intensity.. "Optical Materials", 35, (2013), p.414-418.
  A.248 M. Isik , N.M. Gasanly, F. Korkmaz., Multiphonon absorption processes in layered structured TlGaS2 , TlInS2 and TlGaSe2 single crystals. . "Physica B: Condensed Matter", 421, (2013), p.50-52.
  A.249 N.M. Gasanly, Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals . "Journal of Applied Physics", 113, (2013), p.073504-1-073504.
  A.250 P.Isık, A.Karatay, H. Yaglioglu, A. Elmali, U. Kürüm, A. Ateş, N. Gasanly, The effect of film thickness, Se/S ratio and annealing temperature on the nonlinear and saturable absorption behaviors in amorphous GaSexS1-x (0 ≤ x ≤ 1) thin films. "Optics Communications", 288, (2013), p.107-113.
  A.251 A. F. Qasrawi, N. M. Gasanly, Hall mobility and photoconductivity in TlGaSeS crystals. "Jourrnal of Apllied Physics", 113, (2013), p.023712.
  A.252 T. Yıldırım, N.M. Gasanly , R. Turan, Trapping center parameters in N-implanted Tl2Ga2S3Se single crystals by thermally stimulated currents measurements . "Acta Physica Polonica A", 123, (2013), p.766-769.
  A.253 M. Isik , N.M. Gasanly, R. Turan, Interband transitions in gallium sulfide layered crystals by ellipsometry measurements. . "Physica B: Condensed matter", 408, (2013), p.43-45.
  A.254 M. Isik , E. Bulur, N.M. Gasanly, Low-temperature thermoluminescence in TlGaS2 single crystals. "J. Luminescence", 135, (2013), p.60-65.
  A.255 M. Isik , N.M. Gasanly, R. Turan, Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry. . "J. Alloys and Compounds", 549, (2013), p.179-183.
  A.256 M. Isik , N.M. Gasanly, F. Korkmaz, Infrared and Raman scattering spectra of layered structured Ga3InSe4 crystals.. "Physica B: Condensed Matter", 412, (2013), p.61-63.
  A.257 A. F. Qasrawi, M. M. Abd-Alrazq, and N. M. Gasanly, Optical dynamics of MgO/Ga4Se3S Interface Devices. "Journal of Alloys and Compounds", 583, (2014), p.180-185.
  A.258 S. Delice, N. M. Gasanly, Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements . "Crystal Research and Technology", 49, (2014), p.845-849.
  A.259 S. Delice, M. Isik , N.M. Gasanly, Thermoluminescence characteristics of Tl4GaIn3S8 layered single crystals. "Philosophical Magazine", 94, (2014), p.141-151.
  A.260 M. Isik , S. Delice, N.M. Gasanly, Low-temperature thermoluminescence studies on TlInS2 layered single crystals . "Acta Phys. Polonica A,", 126, (2014), p.1299-1303.
  A.261 S. Delice, M. Isik , N.M. Gasanly, Trapping centers and their distribution in Tl2InGaSe4 single crystals by thermally stimulated luminescence . "Journal of Material Science", 49, (2014), p.2542-2547.
  A.262 M. Isik, S. Delice, N. M. Gasanly, Optical properties of TlGaxIn1-xSe2 layered mixed crystals (0.5 ≤ x ≤ 1) by spectroscopic ellipsometry, transmission and reflection measurements . "Philosophical Magazine", 94, (2014), p.2623-2632.
  A.263 A. F. Qasrawi, Samah F. Abu-Zaid,Salam A. Ghanameh, N. M. Gasanly, Dielectric and photo-dielectric properties of TlGaSeS layered crystals. "Bulletin of Material Science", 137, (2014), p.505-509.
  A.264 I. Guler, N. M. Gasanly, Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals . "Applied Surface Science", 318, (2014), p.113-115.
  A.265 M. Isik, N. M. Gasanly, F. Korkmaz, Compositional dependence of optical modes frequencies in TlGaxIn1-xS2 layered mixed crystals . "Acta Physica Polonica A", 126, (2014), p.747-750.
  A.266 S.Delice, N.M. Gasanly, Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence . "Physica B: Condensed Matter", 441, (2014), p.37-41.
  A.267 M. Isik, W. Hadibrata, N. M. Gasanly, Annealing effect on the thermoluminescence properties of GaSe single crystals. "Journal of Luminescence", 154, (2014), p.131-135.
  A.268 S. Delice, N.M. Gasanly, Thermoluminescence study on TlGaSSe layered single crystals. "Modern Physics Letters B", 28, (2014), p.1450133.
  A.269 S. Delice, E. Bulur, N.M. Gasanly, Anomalous heating rate dependence of thermoluminescence in Tl2GaInS4 single crystals . "Journal of Material Science", 49, (2014), p.8294-8300.
  A.270 A. F. Qasrawi, A. Omar, Ala' M. Azamtta, N. M. Gasanly, Photovoltaic effect and low-pass filtering property of the p-TlGaSeS/n-BN heterojunction . "Physica Status Solidi (a)", 212, (2015), p.600-606.
  A.271 A. F. Qasrawi, N. M. Gasanly, Energy band diagram and current transport mechanism in p-MgO/n-Ga4Se3S. "IEEE Transactions on Electron Devices", 62, (2015), p.102-106.
  A.272 M. Isik, T. Yildirim, N. M. Gasanly, Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals . "J. Phys. Chem. Sol.", 82, (2015), p.56-59.
  A.273 Abdelhalim M. Ziqan, A. F. Qasrawi, Abdulftah H. Mohammad, N. M. Gasanly, Thermally assisted variable range hopping in Tl4S3Se crystal. "Bulletin of Materials Science", 38, (2015), p.593-598.
  A.274 M. Isik, N. M. Gasanly, Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry . "Modern Physics Letters B", 29, (2015), p.1550088.
  A.275 H. Khanfar, A. F. Qasrawi, N. M. Gasanly, Analysis of the junction properties of C/GaSe0.5S0.5/C back-to-back Schottky type photodetectors . "IEEE Sensors Journal", 15, (2015), p.2269-2273.
  A.276 T. Yıldırım, B. Sulunhat, N.M. Gasanly, Low temperature thermally stimulated current measurements in N-implanted TlGaSeS layered single crystals . "Materials Science in Semiconducting Processes", 34, (2015), p.121-125.
  A.277 N.M. Gasanly, Defect characterization of Tl4GaIn3Se2S6 layered single crystals by photoluminescence. "Materials Science in Semiconductor Processes", 38, (2015), p.8-12.
  A.278 S. Delice, E. Bulur, N. M. Gasanly, Thermoluminescence in gallium sulfide crystals: unusual heating rate dependence . "Philosophical Magazine", 95, (2015), p.998-1006.
  A.279 N.M. Gasanly, Composition dependence of lattice parameters and band gap energy of thallium based layered mixed crystals . "Indian Journal of Physics", 89, (2015), p.657-661.
  A.280 A. F. Qasrawi, Abdelhalim M. Ziqan , Suha Kh. Jazzar, N.M. Gasanly, Photon assisted hopping conduction mechanism in Tl2SSe crystals. "Physica B", 458, (2015), p.149-154.
  A.281 S. Delice, M. Isik , E. Bulur, N.M. Gasanly, Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8. "Indian Journal of Physics", 89, (2015), p.571-576.
  A.282 M. Isik, N. M. Gasanly, Ellipsometry study of optical parameters of AgIn5S8 crystals. "Physica B", 478, (2015), p.127-130.
  A.283 N.M. Gasanly, Band gap and refractive index tunability in thallium based layered mixed crystals . "J. Applied Physics", 118, (2015), p.035701.
  A.284 A. F. Qasrawi, S.E. Al Garni, N.M. Gasanly, Characterization of the MgO/GaSe0.5S0.5 heterojunction designed for visible light communications . "Materials Science in Semiconducting Processes", 39, (2015), p.377-383.
  A.285 S. Delice, M. Isik, N. M. Gasanly, Transmission, reflection and thermoluminescence studies on GaS0.75Se0.25 layered single crystals. . "Materials Research Bulletin", 70, (2015), p.236-240.
  A.286 M. Isik, S. Delice, N. M. Gasanly, Analysis of thermoluminescence glow curves of Ga2SeS single crystals. "J. Luminescence", 168, (2015), p.236-240.
  A.287 N.M. Gasanly, Characterization of defect states in Ag0.5Cu0.5In5S8 semiconductor by photoluminescence and thermally stimulated current. "Optical Materials", 46, (2015), p.409-413.
  A.288 M. Isik, E. Tugay, N. M. Gasanly, Temperature-tuned band gap energy and oscillator parameters of GaS0.5Se0.5 single crystals . "Optik", 127, (2016), p.8301-8305.
  A.289 M. Isik, E. Tugay, N. M. Gasanly, Temperature-dependent optical properties of GaSe layered single crystals. "Philosophical Magazine", 96, (2016), p.2564-2573.
  A.290 M. Isik, N. M. Gasanly, Optical parameters of anisotropic chain-structured Tl2InGaTe4 crystals by spectroscopic ellipsometry . "Optik", 127, (2016), p.10637-10642.
  A.291 M. Isik, T. Yildirim, N. M. Gasanly, Analysis of thermoluminescence glow peaks in β-irradiated TlGaSeS crystals . "Acta Physica Polonica A", 129, (2016), p.1165-1168.
  A.292 S. Delice, N. M. Gasanly, Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements . "Physica B", 499, (2016), p.44-48.
  A.293 N.M. Gasanly, Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study . "Infrared Physics and Technology", 77, (2016), p.8-11.
  A.294 A. F. Qasrawi, H.K. Khanfar, N.M. Gasanly, MgO/GaSe0.5S0.5 heterojunction as photodiodes and microwave resonators. "IEEE Sensors,", 16, (2016), p.670-674.
  A.295 N.M. Gasanly, Low-temperature photoluminescence in CuIn5S8 single crystals. "Pramana", 86, (2016), p.1383-1390.
  A.296 N.M. Gasanly, Optical constants of silver and copper indium ternary sulfides from infrared reflectivity measurements . "Infrared Physics and Technology", 75, (2016), p.168-172.
  A.297 N.M. Gasanly, Long-wavelength lattice vibrations of Ag3In5Se9 and Ag3In5Te9 single crystals: An inversion of LO- and TO-modes frequencies . "Modern Physics Letters B", 30, (2016), p.1650229.
  A.298 N.M. Gasanly, Infrared-active modes in Ag3Ga5S9 and Ag3In5S9 single crystals: An influence of trivalent cation substitution . "Optik", 127, (2016), p.6858-6861.
  A.299 N.M. Gasanly, Comparative study of low-temperature photoluminescence and thermally stimulated current in quinary Tl4Ga3InSe6S2 layered crydtals . "J. Luminescence", 172, (2016), p.34-38.
  A.300 S. Delice, N. M. Gasanly, Low-temperature thermoluminescence study of GaSe:Mn layered single crydtals . "Philosophical Magazine", 96, (2016), p.112-121.
  A.301 N.M. Gasanly, Combined low-temperature photoluminescence and thermally stimulated current studies in Cu3In5S9 layered single crystals . "Optik", 127, (2016), p.5148-5151.
  A.302 M. Isik, T. Yildirim, N. M. Gasanly, Thermoluminescence properties of ZnO nanoparticles in the temperature range 10-300 K. "J. Sol-Gel Sci. Technology", 77, (2016), p.76-81.
  A.303 M. Isik, S. Delice, N. M. Gasanly, Defect characterization of Ga4Se3S layered single crystals by thermoluminescence . "Pramana", 86, (2016), p.893-900.
  A.304 M. Isik, N. M. Gasanly, Optical characterization of CuIn5S8 crystals by ellipsometry measurements. "J. Phys. Chem. Sol.", 91, (2016), p.13-17.
  A.305 M. Isik, N. M. Gasanly, Ellipsometric study of optical properties of GaSxSe1-x layered mixed crystals . "Optical Materials", 54, (2016), p.155-159.
  A.306 N.M. Gasanly, Interrelation of vibrational spectra of Ag3Ga5Se9 , Ag3Ga5Te9 and Ag3In5Te9 single crystals: A consequence of trivalent cation and anion substitutions . "Materials Science in Semiconductor Processing", 68, (2017), p.213-216.
  A.307 S. Delice, N. M. Gasanly, Study of the optical and photoelectrical properties of TlGaSeS layered single crystals . "Materials Science in Semiconducting Processes", 63, (2017), p.72-75.
  A.308 N.M. Gasanly, Far-infrared reflectivity spectra of copper gallium (indium) ternary tellurides: A consequence of trivalent cation interrelation . "Optik", 143, (2017), p.19-25.
  A.309 A. Omar, A. F. Qasrawi, N. M. Gasanly, Temperature effects on the structural and optical properties and dielectric dispersion in the TlInSe2xS2(1-x) mixed crystals (x=0.3) . "J. Alloys and Compounds", 724, (2017), p.98-102.
  A.310 A. Kadari, S. Delice, N. M. Gasanly, Dose dependence effect of thermoluminescence process in TlInS2:Nd single crystals. "Optik", 138, (2017), p.372-376.
  A.311 H. K. Khanfar, A. F. Qasrawi, Yasmeen A. Zakarneh, N. M. Gasanly, Design and Applications of The Yb/Ga2Se3/C Schottky Barriers. "IEEE Sensors,", 17, (2017), p.4429-4434.
  A.312 M. Isik, E. Tugay, N. M. Gasanly, Optical properties of GaS crystals: Combined study of temperature-dependent band gap energy and oscillator parameters . "Indian Journal of Pure and Applied Physics", 55, (2017), p.583-588.
  A.313 M. Isik, N. M. Gasanly, Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals . "Materials Chemistry and Physics", 190, (2017), p.74-78.
  A.314 M. Isik, N. M. Gasanly, Analysis of optical constants and temperature-dependent absorption edge of GaS0.75Se0.25 semiconducting crystals . "Materials Research Bulletin", 90, (2017), p.280-284.
  A.315 M. Isik, E. Bulur, N. M. Gasanly, Photo-transferred thermoluminescence of shallow traps in β-irradiated BeO ceramics . "J. Luminescence", 187, (2017), p.290-294.
  A.316 M. Isik, N. M. Gasanly, Determination of optical constants and temperature-dependent band gap energy of GaS0.25Se0.75 single crystals . "J. Optoelectroncs and Advanced Materials", 19, (2017), p.374-378.
 

Conference Papers

  A.1 Topal, U., Kayed, T., Ozkan, H. and Gasanly, N.M.., Effect of Gamma Irradiation on Structure and Electrical Properties of Tl2Ba2Ca2Cu3O10 Superconductor. . "9th International Conference on Modern Materials and Tecnologies", (1998), p.L19.
  A.2 Topal, U., Kayed, T., Gasanly, N.M. and Ozkan, H., Effect of Magnetic Field and Temperature on the Voltage-Current Characteristics of Polycrystalline Tl2Ba2Ca2Cu3O10 Superconductor. . "9th International Conference on Modern Materials and Technologies", (1998), p.P09.
  A.3 Ozkan, H., Topal, U., Gasanly, N., Kayed, T., Albiss, B. and Ercan, I., Effect of Magnetic Field and Gamma Irradiation on Voltage-Current Characteristics of the Thallium Based Ceramic Superconductors.. "The 9th International Workshop on Critical Currents", (1999), p.192-193.
  A.4 Ozkan, H., Gasanly, N., Topal, U. and Kayed, T., Effect of Gamma Irradiation on the Electrical Properties and Structure of the Thallium Based Ceramic Superconductors.. "Materials Research Society Fall Meeting", (1999), p.187.
  A.5 Yılmaz, I., Gasanly, N.M., Nagiev, V.M. and Dzhafarova, M., Photoluminescence of TlBX2-type Layered Crystals Studied by Temperature and Excitation Intensity Dependence . "XIIth International Conference on Ternary and Multinary Compounds,", (2000), p.P2-85.
  A.6 Kayed, T., Ozkan, H., Gasanly, N.M. and Ercan, I., Properties of the Bi-Based Tapes Near Critical Temperature Under Magnetic Field and Gamma Irradiation . "XIVth International Conference on Applied Superconductivity", (2000), p.3MD06.
  A.7 Gasanly, N.M., Aydinli, A., Kocabas, C. and Ozkan, H., Anharmonic Line Shift and Line Width of the Raman Modes in ε-GaSe Layered Single Crystals . "First Hellenic-Turkish International Physics Conference", (2001), p.240.
  A.8 Gasanly, N.M., Aydinli, A. and Salihoglu, O., Trapping Parameters in Undoped GaSe Layered Single Crystals. "First Hellenic-Turkish International Physics Conference", (2001), p.248.
  A.9 Aydinli, A., Gasanly, N.M. and Goksen, K., Radiative Centers in Undoes p-GaSe Layered Semiconductor. "First Hellenic-Turkish International Physics Conference", (2001), p.236.
  A.10 Aydinli, A. and Gasanly, N.M., Luminescence in Layered Semiconductors. "First Hellenic -Turkish International Physics Conference", (2001), p.9.
  A.11 Kayed, T.S., Ozkan, H. and Gasanly, N.M., Effect of Lithium Doping on the Properties of Tl-based Superconductors. "10 th International Workshop on Critical Currents", (2001), p.351-353.
  A.12 Aydinli, A., Gasanly, N.M., Goksen, K., Nagiev, V.M. and Caferova, M., Photoluminescence Characterization of GaS0.5Se0.5 Layered Single Crystals. "First Hellenic-Turkish International Physics Conference", (2001), p.237.
  A.13 Özkan, H., Gasanly, N.,Cavdar, Ş., Aksu, E., Koralay , H. and Ercan, İ., Influence of Boron Doping on the Electrical Properties of Thallium Based Superconductors . " Applied Superconductivity Conference (ASC 2002)", (2002), p.1MC06.
  A.14 Ogün, S.E. , Özkan, H. and Gasanly, N.M., Effect of LiCO3 Doping on the Properties of (Bi,Pb)-based Superconductors. "Applied Superconductivity Conference (ASC 2002)", (2002), p.4MF15.
  A.15 Özkan, H., Cavdar, Ş., Aksu, E., Koralay , H., Ercan, İ. and Gasanly, N., Effect of B2O3 Doping on the Properties of Tl-based Superconductors.. "International Conference on Superconductivity, SCRM 2002", (2002), p.P59.
  A.16 Panich, A.M., Gasanly, N.M. and Kashida, S., Indirect Nuclear Exchange Coupling and Electronic Structure of the Chain Semiconductors TlSe and TlS: 203Tl and 205Tl NMR Study. . "International 31st Congress Ampere, Poznan", (2002), p.57.
  A.17 Çavdar, S., Aksu, E., Koralay, H., Özkan, H., Gasanly, N.M. and Ercan, I., B2O3 Addition Helps the Formation of Tl-2212 and Tl-2223 Superconductors. "13th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-03)", (2003), p.SP-03.
  A.18 Ogun, S.E, Goktas, H., Ozkan, H. and Gasanly, N.M., Effect of Low Energy Electron Irradiation on (Bi,Pb)-2212 Superconductors. "13th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-03)", (2003), p.SO-01.
  A.19 I. Guler, N.M. Gasanly, M. Caferova, Photoluminescence in layered Tl2In2S3Se semiconductor.. "24th International Physics Congress", (2007), p.478-479.
  A.20 K. Goksen, N.M. Gasanly, H. Ozkan, M. Caferova, Low-temperature photoluminescence in Tl4InGa3S8 single crystals. "24th International Physics Congress", (2007), p.482.
  A.21 K. Goksen and N.M. Gasanly, Effect of Temperature and Excitation Intensity on the Photoluminescence in Tl4In3GaSe8 Chain Crystals. . "Sixth International Conference: Microelectronic Transformers and Devices on their Basis", (2007), p.27-28.
  A.22 H. Sozeri, N. Ghazanfari, H. Özkan, A. Kilic and N.M. Gasanly., Effect of Nb Addition on the Critical Parameters of BSCCO Superconductor.. "American Institute of Physics Conference Proceedings", 929, (2007), p.138-142.
  A.23 M. Isik, N. M. Gasanly and H. Ozkan, Thermally stimulated current study of traps distribution in Tl2Ga2Se3S layered crystals. "Condensed Matter Physics Conference of Balkan Countries", (2008), p.107.
  A.24 I. Guler, N.M. Gasanly, Dispersive optical constants of TlInSeS crystals . "Condensed Matter Physics Conference of Balkan Countries", (2008), p.26.
  A.25 N. M. Gasanly, Сoexistence of indirect and direct optical transitions and temperature-tuned energy band gap in TlGaS2 , TlGaSe2 and TlInS2 layered crystals. . "Fifth International Conference: Topical Problems of Physics, Baku", (2008), p.251-253.
  A.26 T. Yildirim, H. Nasser, İ. Kucuk, İ. Guler, M. Isik, H. Özkan and N. Hasanli, Determination of trapping centers parameters and their distribution in Tl2Ga2S3Se layered crystals by thermally stimulated current measurements. . "26th International Physics Conference", (2009), p.521.
  A.27 T. Yildirim, H. Nasser, N. M. Gasanly, H. Ozkan, Traps distribution in TlGaSeS single crystals from thermally stimulated current measurements . "Second International Conference "Scientific-Technical Progress and Modern Aviation"", (2009), p.177-179.
  A.28 I. Guler, N. M. Gasanly, Temperature- and Excitation-Dependent Photoluminescence in Quaternary Tl2In2S3Se Layered Crystals. . "Second International Meeting on Materials for Electronic, Hammamet, Tunisia, 8-10 May 2009", (2009), p.105.
  A.29 I. Guler, N. M. Hasanli, M. Isik, T. Yıldırım., Trapping centers and their distribution in Tl2In2Se3S layered single crystals. "7th BPU General Conference", (2009), p.63.
  A.30 I. Guler and N. M. Hasanli., Coexistence of indirect and direct optical transitionsand temperature-tuned band gap in Tl2In2Se3S layered crystals. . "26th International Physics Conference", (2009), p.443.
  A.31 K. Goksen, N. Hasanli, T. Yildirim, M. Isik., Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlGaS2xSe2(1-x) layered mixed crystals (0  x  1).. "27th International Physics Conference", (2010), p.631.
  A.32 K. Goksen, N. Hasanli, H. Ozkan, Tuning optical absorption edge by composition and temperature in TlGaxIn1-xS2 layered mixed crystals (0  x  1).. "International Conference Physics 2010", (2010), p.143-146.
  A.33 I. Guler, N. Hasanli, H. Ozkan, Trapping Centers and their Distribution in TlInSSe Single Crystals. "11th Europhysical Conference on Defects in Insulating Materials", (2010), p.B 100.
  A.34 T. Yıldırım, N. Hasanli., Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals.. "Gordon Research International Conferences: Defects in Semiconductors", (2010), p.241.
  A.35 T. Yıldırım, İ. Küçük, M. Kulakçı, N. Hasanli and R. Turan, Thermally stimulated current measurements in N implanted TlGaSeS layered single crystals . "Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6-9 Eylül 2011, Bodrum,", (2011), p.817.
  A.36 M. Isik, N. Hasanli, I. Guler, Determination of trapping center parameters in In6S7 single crystals by thermally stimulated current measurements. "Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6-9 Eylül 2011, Bodrum", (2011), p.735.
  A.37 M. IŞIK, E. BULUR, N. HASANLİ, THERMALLY STIMULATED CURRENT AND THERMOLUMINESCENCE MEASUREMENTS ON Ga0.75In0.25Se LAYERED SINGLE CRYSTALS. "Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5-8 Eylül 2012, Bodrum,", (2012), p.205.
  A.38 T. YILDIRIM, M. GÜNER, N. KÜÇÜK, A. O. KONUK, İ. KÜÇÜK, N. M. GASANLY,, THERMOLUMINESCENCE STUDY IN Gd DOPED ZnO NANOCRYSTALS GROWN BY SOL GEL AND NITRIC ACID METHOD. "Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5-8 Eylül 2012, Bodrum,", (2012), p.540.
  A.39 M. IŞIK, İ. GÜLER, N. HASANLİ, LOW-TEMPERATURE PHOTOLUMINESCENCE IN Ga3InSe4 LAYERED SINGLE CRYSTALS . "Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5-8 Eylül 2012, Bodrum,", (2012), p.313.
  A.40 A Elmali, P.Sevgi, A.Karatay, H.Yaglioglu, U.Kürüm, A. Ates, N. Gasanly, NANO KALINLIK VE KATKILANDIRMANIN IIIA-VIA GRUBU AMORF YARIİLETKEN İNCE FİLMLERİN DOĞRUSAL OLMAYAN OPTİK ÖZELLİKLERİNE ETKİSİ. "Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5-8 Eylül 2012, Bodrum, Türkiye", (2012), p.375.
  A.41 N.M. Gasanly, M. Isik, S. Delice, Dielectric Functions and Interband Transitions in Anisotropic Layered Structured Tl2GaInS4 Crystals by Spectroscopic Ellipsometry . "Fourth International Meeting on Dielectric Materials, Marrakech, 29-31.05.2013", (2013), p.148.
  A.42 I. Guler, N.M. Gasanly, Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25≤x≤1): Compositional dependence of the mode frequencies and line widths . "International Conference "NanoTR-9", 24-28.06. 2013, Erzurum, Türkiye", (2013), p.78.
  A.43 S. Delice, M. Isik, N.M. Gasanly, Low-temperature study of thermally stimulated currents in layered-structured Tl4GaIn3S8 crystals, . "III International Conference, Novel Semiconductor Materials and Structures, 04-07.07.2013, Baku", (2013), p.26.
  A.44 S. Delice, M. Isik, N.M. Hasanli, Characterization of defect centers in TlGaSeS layered crystals by thermoluminescence measurements. . "International Conference "Condensed Matter in Paris 2014", 24-29.08.2014, Paris,", (2014), p.126.
  A.45 M. Isik, T. Yildirim, N.M. Hasanli, Thermoluminescence properties of Gd-doped ZnO nanocrystals. "International Conference "Condensed Matter in Paris 2014", 24-29.08.2014, Paris,", (2014), p.245.
  A.46 S. Delice, N.M. Hasanli, M. Isik., Thermoluminescence measurements in Tl2Ga2Se3S single crystals.. "Türk Fizik Derneği 31. Uluslararası Fizik Kongresi, 20-24 Temmuz 2014, Bodrum,", (2014), p.379.
  A.47 N.M. Hasanli , S. Delice, M. Isik., Optical constants and energy gaps of TlGaXIn1-XSe2 mixed crystals by ellipsometry, transmission and reflection measurements. . "International Conference "Condensed Matter in Paris 2014", 24-29.08.2014, Paris,", (2014), p.387.
  A.48 N. Hasanli, M. Isik, S. Delice, E. Bulur, The analysis of phototransferred low temperature thermoluminescence from BeO ceramics after beta-irradiation. . "The Seventh Eurasian Conference "Nuclear Science and Its Applicatin", 21-24.10.2014, Baku,", (2014), p.167.
  A.49 S. Delice, M. Isik, T. Yildirim, N. Hasanli, Low- and high-temperature thermoluminescence in TlGaSSe semiconductor crystals. "28. International Conference on Defects in Semiconductors, 25-31.07.2015, Espoo, Finland.", (2015), p.74.
  A.50 N. Hasanli, M. Isik, S. Delice, Photoluminescence and Thermoluminescence Study on Tl2Ga2S3Se Layered Crystals. "The 4. Intern. Conf. Physics of Optical Materials and Devices, August 31st – Sept 2015, Montenegro", (2015), p.160.
  A.51 M. Isik, S. Delice, N. Hasanli, Analysis of Thermoluminescence Glow Curves of Ga2SeS Layered Crystals. "The 4. Intern. Conf. Physics of Optical Materials and Devices, August 31st – Sept 2015, Montenegro", (2015), p.117.
  A.52 Nizami HASANLI, Mehmet ISIK, Serdar DELICE, Vibrational spectra of Ag3In5Se9 and Ag3In5Te9 crystals: an inversion of LO- and TO-modes frequencies. "16th International Balkan Workshop on Applied Physics,", (2016), p.29.
  A.53 T. Yildirim, N. M. Hasanli, S. Tuzemen, Thermally stimulated current measurements in Ga-rich gallium arsenide crystals. "Uluslararası Malzeme Bilimi ve Teknoloji Konferansı, Kapadokya, Türkiye (İMSTEC ’16 )", (2016), p.227.
  A.54 T. Yıldırım, M. Isik, N.M. Gasanly, Determination of trapping centers parameters of ZnO nanoparticles by thermoluminescence. "Uluslararası Malzeme Bilimi ve Teknoloji Konferansı, Kapadokya, Türkiye (İMSTEC ’16 )", (2016), p.249.
  A.55 Mehmet ISIK, Nizami HASANLI, Evrin TUGAY, Temperature dependent optical properties of Ga4Se3S layered single crystals. "16th International Balkan Workshop on Applied Physics, Constanta,", (2016), p.2.
  A.56 N. Hasanli, S. Delice and M. Isik, Thermoluminescence study on TlInS2:Nd single crystals. "20th International Conference on Ternary and Multinary Compounds – ICTMC-20, Halle", (2016), p.44.
  A.57 Nizami Hasanli, Mehmet Isik, Ahmet Ogan, Band gap energy and refractive index tuning in GaSxSe1-x semiconducting crystals. " E-MRS European Materials Research Society Spring Meeting 2017, 22-26 May, Strasbourg, France", (2017).
  A.58 Mehmet Isik, Nizami Hasanli, Interband transitions and optical constants of GaSxSe1-x layered mixed crystals by ellipsometry . "E-MRS European Materials Research Society Spring Meeting 2017, 22-26 May, Strasbourg, France", (2017).
  A.59 I. Guler, M. Ambrico, T. Ligonzo, N.M. Gasanly, Temperature-dependent photoconductivity responce and band gap variation of Tl2In2S3Se layered single crystals . "American Physical Society March Meeting in New Orleans, March 13-17, 2017, Louisiana, USA", (2017).
  A.60 N.M. Hasanli, A.K. Ogan, M. Isik, Combined Raman and infrared studies in silver sulfospinel AgIn5S8. "International Conference “Modern Trends in Physics”, April 20-22 2017, Baku, Azerbaijan", (2017).
  A.61 Serdar Delice, Nizami Hasanli, Thermoluminescence properties of GaSe:Mn single crystals. "17th International Balkan Workshop on Applied Physics and Materials Science, 2017, 11-14 July,", (2017).

Book and Chapter in a Book

  A.1 Yuksek, N.S., Gasanly, N.M., Ozkan H., Thermally Stimulated Current Observation of Trapping Centers in Layered Thallium Dichalcogenide Semiconductors. . "Focus on Semiconductor Research", (2005), p.78.

Publications (NATIONAL)

 

Journal Papers

  A.1 H. Ozkan, N.M. Gasanly ,A. Culfaz., Effect of Isomorphic Atom Substitution on Lattice Parameters of TlBX2-Type Mixed Crystals. . "Turkish J. Phys.", 20, (1996), s.800-804.
  A.2 Ozkan, H., Gasanly, N.M., Yilmaz, I. and Culfaz, A., Crystal Data for A3B5C9-type Ternary Compounds. "Turkish Journal of Physics", 22, (1998), s.519-524.
 

Conference Papers

  A.1 Yilmaz, I., Gasanly, N.M., Serpenguzel, A., Aydinli, A. and Gurlu,O., Visible Photoluminescence from AgIn5S8 Single Crystals.. "Yoğun Madde Fiziği Seminerleri - VII", (1998), s.P1.
  A.2 Yilmaz, I., Gasanly, N.M., Aydinli, A. ve Serpenguzel, A., TlBX2-tipi Tabakalı Kristallerin Sıcaklık ve Uyarma Şiddetine Bağlı Fotoışımaları.. "Türk Fizik Derneği 18. Fizik Kongresi", (1999), s.196.
  A.3 Gasanly, N., Özkan, H., Nağıyev, V. ve Caferova, M., TlBX2-tipi Karışık Kristallerde Örğü Anizotropisinin Bileşim ile Değişimi.. "Türk Fizik Derneği 18. Fizik Kongresi", (1999), s.227.
  A.4 Topal, U., Özkan, H. ve Gasanly, N., Tabletleme Basıncının Talyum Bazlı Süperiletkenlerin Elektriksel ve Yapısal Özelliklerine Etkisi.. "Türk Fizik Derneği 18. Fizik Kongresi", (1999), s.364.
  A.5 Gasanly, N.M., Aydınlı, A., Özkan, H. and Kocabaş, C., Tabakalı GaS Kristallerinde Optik Fononların Anharmonik Etkisi.. "Türk Fizik Derneği II. Ulusal Yoğun Madde Fiziği Kongresi", (2000), s.62.
  A.6 Kayed, T., Özkan, H., Turan, R., Gasanly, N., Ercan, I., Koralay, H., Aksu, H., Tl-tabanlı Süperiletkenlerde Bor İyon Işınlama Etkisi. "Türk Fizik Derneği 19. Fizik Kongresi", (2000), s.230.
  A.7 Aydınlı, A., Gasanly, N.M., Yurtsever, A. and Gökşen, K., Galyum Sülfürün Fotoışımada Verici-Alıcı Çiftlerinin Rolü. "Türk Fizik Derneği II. Ulusal Yoğun Madde Fiziği Kongresi", (2000), s.18.
  A.8 Salıhoğlu, O., Gasanly, N.M. and Aydınlı, A., GaS Tabakalı Kristallerinin Isıl Uyarılmış İletkenlik Spectrumu. "Türk Fizik Derneği 19. Fizik Kongresi", (2000), s.239.
  A.9 Kocabaş, C., Gasanly, N.M., Aydınlı, A. and Özkan, H., Tabakalı GaS0.5Se0.5 Kristallerinde Raman-etkın Fononların Sıcaklığa Bağımlılıkları. "Türk Fizik Derneği 19. Fizik Kongresi,", (2000), s.225.
  A.10 Cavdar, S., Aksu, E., Koralay, H., Ozkan, H., Ercan, I. and Gasanly, N.M., TlBaCaCuO(2223) Süperiletkenine B2O3 Katkılama Etkileri. "II. Ulusal Yüksek Sıcaklık Süperiletkenler Sempozyumu", (2001), s.9.
  A.11 Gasanly, N.M. , Aydınlı, A. , Özkan , H. Nağıev, V.M. ve Caferova, M., GaS1-XSeX Karışık Kristallerin Raman Spektrumlarının Sıcaklık ile Değişimi. "Türk Fizik Derneği 21. Fizik Kongresi", (2002), s.342.
  A.12 Gökşen, K. , Gasanly, N.M. ve Özkan, H., GaS0.75Se0.25 Katmanlı Kristallerinin Fotoışıma Spektrumu. "Türk Fizik Derneği 21. Fizik Kongresi", (2002), s.399.
  A.13 Yüksek, N.S. , Gasanly, N.M. , Aydinli, A. ve Özkan, H., InS Tek Kristallerde Isıl Uyarılmış Akımlar. "Türk Fizik Derneği 21. Fizik Kongresi", (2002), s.347.
  A.14 Cavdar, Ş., Aksu, E., Koralay , H., Özkan, H., Ercan, İ. and Gasanly, N., Tl2Ba2Ca2Cu3Ox Süperiletkenine  Radyasyon Etkisi. "Türk Fizik Derneği 21. Fizik Kongresi", (2002), s.364.
  A.15 N.S. Yüksek, N.M. Gasanly, H. Özkan, Isıl Uyarılmış Akım Metoduyla TlGaS2 Katmanlı Kristallerinde Sığ Tuzak Merkezleri Analizi. . "10. Yoğun Madde Fiziği Ankara Toplantısı, Ankara", (2003), s.P 18.
  A.16 N.S. Yüksek, N.M. Gasanly, A. Aydınlı, H. Özkan, V.M. Nağıev, M. Caferova., TlInS2 Katmanlı Kristallerinde Raman Modlarının Sıcaklığa Bağımlı Çizgi Kaymaları ve Çizgi Genişlikleri. . "10. Yoğun Madde Fiziği Ankara Toplantısı, Ankara", (2003), s.P 17.
  A.17 N.S. Yüksek, N.M. Gasanly, A. Aydınlı., TlInSeS Tek Kristallerinde Sıcaklık ve Uyarma Yoğunluğuna Bağlı Fotoışıma.. "10. Yoğun Madde Fiziği Ankara Toplantısı, Ankara", (2003), s.P 16.
  A.18 Koralay, H., Cavdar, S., Aksu, E., Günen, A., Özkan, H., and Gasanly, N., Tl-2223 Süperiletken Yapının Sıcaklıkla Değişimi. "Türk Fizik Derneği 22. Fizik Kongresi", (2004), s.463.
  A.19 Yuksek, N.S., Gasanly, N.M., Ozkan, H. and Caferova, M., TlInS2 Katmanlı Kristallerinin Tuzak Merkezleri Analiz. "Türk Fizik Derneği 22. Fizik Kongresi", (2004), s.519.
  A.20 Cavdar, S., Koralay, H., Aksu, E., Günen, A., Özkan, H., Gasanly, N. and Acar, S, Tl-2223 Süperiletkeninin Yapısal, Elektriksel ve Magnetik Özelliklerine B2O3 Katkılama Etkisi . "Türk Fizik Derneği 22. Fizik Kongresi", (2004), s.418.
  A.21 Mogaddam, N., Yuksek, N.S., Gasanly, N.M. and Ozkan, H., Trap levels in layered semiconductor Tl2InGaS4. "Turk Fizik Dernegi 23. Fizik Kongresi", (2005), s.579.
  A.22 Goksen, K., Gasanly, N.M. and Ozkan, H., Excitation intensity- and temperature-dependent photoluminescence in Tl2InGaS4 layered crystals. "Turk Fizik Dernegi 23. Fizik Kongresi", (2005), s.556.
  A.23 I. Kocer, K. Goksen, N. M. Gasanly, R. Turan, Photoluminescence in layered Tl2In2Se3S semiconductor. "13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara", (2006), s.81.
  A.24 K. Goksen, N. M. Gasanly, R. Turan, H. Ozkan, Excitation intensity- and temperature-dependent photoluminescence in Tl4In3GaSe8 chain crystals . "13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara", (2006), s.82.
  A.25 M. Isik, K. Goksen, N. M. Gasanly and H. Ozkan, TlInS2 Katmanlı Kristallerde Düşük Sıcaklıklarda Isıluyarılmış Akım Ölçümleri ile Tuzak Parametrilerinin Belirlenmesi . "14. Yoğun Madde Fiziği Ankara Toplantısı", (2007), s.73.
  A.26 M. Isik, N. M. Gasanly, H. Ozkan, TlInS2 Katmanlı Kristallerde Yüksek Sıcaklıklarda (100-300 K)Isıluyarılmış Akım Ölçümleri . "15. Yoğun Madde Fiziği Toplantısı", (2008), s.27.
  A.27 T. Yildirim, N. M. Gasanly, H. Ozkan, Katmanlı Yapıya Sahip Yarıiletken TlGaSeS Kristallerinde Tuzakların Dağılımı . "15. Yoğun Madde Fiziği Toplantısı,", (2008), s.29.
  A.28 İ. Güler, N. M. Gasanly, Katmanlı Tl2In2S3Se Kristallerinde Uyarılma ve Sıcaklık Bağımlı Fotoışıma. "15. Yoğun Madde Fiziği Toplantısı", (2008), s.28.
  A.29 M. Isık, N. M. Hasanli, H. Özkan, Tl2Ga2Se3S Katmanlı Kristallerde Isıluyarılmış Akım Ölçümleri ile Tuzak Parametrilerinin Belirlenmesi . "16. Yoğun Madde Fiziği – Ankara Toplantisi", (2009), s.P21.
  A.30 İ. Güler, N. M. Hasanli, H. Özkan, Katmanlı Yarıiletken Tl2In2S3Se Kristallerinde Tuzakların Dağılımı.. "Metal, Yarıiletken ve Oksit Materyallerin Üretilmesinde Kullanilan Sistemler Analiz Teknikleri Kongr", (2009), s.69.
  A.31 I. Guler, N. M. Hasanli., Tl2In2S3Se Katmanlı Yarı İletkenlerin Optik Spektrumlarının Belirgin Özellikleri . "16. Yoğun Madde Fiziği – Ankara Toplantisi", (2009), s.P8.
  A.32 T. Yıldırım, İ. Küçük, M. Kabaer, H. A. Nasser, İ. Güler, M. Işık, K. Ertürk,, Katmanlı Yapıya Sahip Yarıiletken Kristallerde Tuzak Dağılımının Modellenmesi.. "Metal, Yarıiletken ve Oksit Materyallerin Üretilmesinde Kullanilan Sistemler ve", (2009), s.59.
  A.33 İ. Kucuk, T. Yildirim, M. Isik, H. Nasser, N. Hasanli, Katmanlı Yapıya Sahip Yarıiletken Kristallerde İzotermal Azalma Eğrilerinin Modellenmesi . "16. Yoğun Madde Fiziği – Ankara Toplantisi", (2009), s.P38.
  A.34 T. Yıldırım, M. Işık, N. Hasanli , H. Özkan, TlInSe2 Zincir Yapılı Kristallerde Tuzak Merkezi Parametrelerinin Isıluyarılmış Akım Ölçümleri ile Belirlenmesi. . "17. Yoğun Madde Fiziği Ankara Toplantisi", (2010), s.51.
  A.35 M. Isık, N.M. Hasanli, Katkılanmamış Ga3InSe4 tek kristallerinde ısıluyarılmış akım ölçümleri. "18. Yoğun Madde Fiziği Ankara Toplantisi , Ankara", (2011), s.57.
  A.36 S. Delice, M. Isik, E. Bulur, N.M. Gasanly, Thermally stimulated luminescence in Tl4Ga3InS8 layered single crystals. "7. Ulusal Kongre "Lüminesans ve Dozimetri (LümiDoz7)", 10-12.09. 2013,Isparta, Türkiye", (2013), s.43.
  A.37 Ahmet Karatay, Pınar Işik, Ulaş Kürüm, Çağla Aksoy, H. Yaglioglu, Nizami Hasanli, The Effect of Film Thickness and Doping on the Nonlinear and Saturable Absorption Behaviour of Semiconductor Thin Films . "20. Yoğun Madde Fiziği - Ankara Toplantısı, 26 Aralık 2014, Ankara,", (2014), s.P 14.
  A.38 Mehmet Işık, Serdar Delice, Enver Bulur, Nizami Hasanli., Beta Radyasyonuna Maruz Bırakılan BeO Seramiklerinde Düşük Sıcaklık Fototransfer Termolüminesans Ölçümleri. . "20. Yoğun Madde Fiziği - Ankara Toplantısı, 26 Aralık 2014, Ankara,", (2014), s.P 09.
  A.39 S. Delice, M. Isik, N. Hasanli, Tl2Ga2Se3S tek kristallerinde düşük sıcaklık termolüminesans ölçümleri. "21. Yoğun Madde Fiziği - Ankara Toplantısı, 25 Aralık 2015, Ankara, Türkiye.", (2015), s.42.
  A.40 Mehmet Işık, Nizami Hasanli, GaSe katmanlı tek kristallerinin sıcaklık bağımlı optik özellikleri. "22. Yoğun Madde Fiziği Ankara Toplantısı, 16 Aralık, Ankara,", (2016), s.57.
  A.41 Mehmet Işık, Serdar Delice, Nizami Hasanli, Gd2O3 nanoparçacıklarının tuzak merkezlerinin düşük sıcaklık termolüminesans ölçümleri ile karakterizasyonu . " 23. Yoğun Madde Fiziği – Ankara Toplantısı, Orta Doğu Teknik Üniversitesi, 22 Aralık 2017,", (2017).
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